| PART |
Description |
Maker |
| HYMD564646L8 HYMD5646468 HYMD564646XXX HYMD5646468 |
Unbuffered DDR SDRAM DIMM
64Mx64|2.5V|K/H/L|x8|DDR SDRAM - Unbuffered DIMM 512MB
64M X 64 DDR DRAM MODULE, 0.75 ns, DMA184
|
Hynix Semiconductor
HYNIX SEMICONDUCTOR INC
|
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| W3EG6464S-BD4 |
512MB - 64Mx64 DDR SDRAM UNBUFFERED w/PLL 512MB 64Mx64 DDR SDRAM的缓冲瓦锁相
|
STMicroelectronics N.V.
|
| W3EG6465S265D4C W3EG6465S263D4C W3EG6465S262D4C W3 |
512MB- 64Mx64 DDR SDRAM UNBUFFERED
|
WEDC[White Electronic Designs Corporation]
|
| HYMD264646B8J |
DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| HYMD264646A8J |
DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
| EBD52EC8AAFA-6B |
512MB Unbuffered DDR SDRAM DIMM
|
Elpida Memory
|
| W3EG6466S335BD4 W3EG6466S202AD4 W3EG6466S202BD4 W3 |
512MB - 2x32Mx64 DDR SDRAM UNBUFFERED, w/PLL
|
WEDC[White Electronic Designs Corporation]
|
| M470L6524DU0-LCC M470L2923DV0-CA2 M470L2923DV0-CB0 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
SAMSUNG[Samsung semiconductor]
|
| HYMD264726A8 HYMD264726AL8-H HYMD264726AL8-K HYMD2 |
64Mx72|2.5V|M/K/H/L|x18|DDR SDRAM - Unbuffered DIMM 512MB
|
Hynix Semiconductor
|
