| PART |
Description |
Maker |
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| NTHD4P02F NTHD4P02FT1 NTHD4P02FT1G |
Power MOSFET and Schottky Diode 20 V, 2.1A, Single P-Channel w/ 1.0 A Schottky Barrier Diode, ChipFET
Power MOSFET and Schottky Diode 2.2 A, 20 V, 0.155 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ONSEMI[ON Semiconductor]
|
| SMDT-650H-12 SMDT-650H-14 SMDT-650H-16 SMDT-650H-1 |
Diod-Thyristor Module
|
SEMPO ELECTRONIC Limited
|
| IRF6795MPBF10 IRF6795MTRPBF |
32 A, 25 V, 0.0018 ohm, N-CHANNEL, Si, POWER, MOSFET
HEXFET Power MOSFET plus Schottky Diode
|
International Rectifier
|
| UL1970N UL1970 |
Ukad sterujcy punktowym wskanikiem zoonym z diod wieccych
OBUDOWA CE 71
|
Ultra CEMI
ETC
|
| IRG4BC15UD-LPBF IRG4BC15UD-SPBF IRG4BC15UD-L IRG4B |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIOD
|
International Rectifier
|
| NTLJF3117PTAG |
Power MOSFET and Schottky Diode −20 V, −4.1 A, P−Channel, with 2.0 A Schottky Barrier Diode, 2x2 mm, uCool Package 2.3 A, 20 V, 0.135 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| NTLJD3182FZ NTLJD3182FZTAG NTLJD3182FZTBG |
Power MOSFET and Schottky Diode −20 V, −4.0 A, μCool Single P−Channel & Schottky Barrier Diode, ESD
Power MOSFET and Schottky Diode −20 V, −4.0 A, 楼矛Cool垄芒 Single P−Channel & Schottky Barrier Diode, ESD
|
ON Semiconductor
|
| DMS3015SSS-13 DMS3015SSS |
N-CHANNEL ENHANCEMENT MODE MOSFET WITH SCHOTTKY DIODE
11 A, 30 V, 0.0119 ohm, N-CHANNEL, Si, POWER, MOSFET GREEN, PLASTIC, SOP-8
|
Diodes Incorporated
Diodes, Inc.
|
| NTHD4P02F05 NTHD4P02FT1G NTHD4P02F NTHD4P02FT1 |
Power MOSFET and Schottky Diode
|
ONSEMI[ON Semiconductor]
|
| WPM2006 WPM2006-6TR |
Power MOSFET and Schottky Diode
|
TY Semiconductor Co., Ltd
|
|
