| PART |
Description |
Maker |
| SML05SC06D3B.L1DE SML05SC06D3A-JQRS |
5 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE
|
SEMELAB LTD
|
| STPSC806D |
600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
| STPSC806 |
Schottky Barrier 600 V power Schottky silicon carbide diode
|
ST Microelectronics
|
| APTDC30H601G |
30 A, 600 V, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
SiC Diode Full Bridge Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Microsemi Corporation
|
| SHD626031 SHD626031D SHD626031N SHD626031P SHD6260 |
HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE, TO-257AA
|
Sensitron Semiconductor
|
| UPSC600 UPSC200 UPSC400 |
Silicon Carbide Schottky Rectifiers
Silicon Carbide (SiC) Schottky
|
MICROSEMI[Microsemi Corporation]
|
| SIDC16D60SIC3 |
Silicon Carbide Ultrafast Schottky Diode Chips
Silicon Carbide Schottky Diode
|
INFINEON[Infineon Technologies AG]
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| CS220-35N CS220-35M |
SILICON CONTROLLED RECTIFIER 35 AMP, 600 THRU 800 VOLTS 35 A, 600 V, SCR, TO-220AB
|
Central Semiconductor Corp.
Central Semiconductor, Corp.
|
| NXPSC08650-15 |
Silicon Carbide Diode
|
NXP Semiconductors
|
| C3D04065E |
Silicon Carbide Schottky Diode
|
Cree, Inc
|
|
