| PART |
Description |
Maker |
| 3VD395650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD499650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD379600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD324400YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| MC08ED150J-F MC08CA020D-F MC08CA050D-F MC08CA060D- |
Multilayer RF Capacitors High-Frequency, High-Power, High-Voltage Chips with Nonmagnetic Option
|
Cornell Dubilier Electronics, Inc.
http://
Cornell Dubilier Electronic...
Cornell Dubilier Electr...
|
| 12065C104KAT2A |
High Voltage Chips
|
AVX Corporation
|
| 1206SXXX 1808AXXX 2225AXXX 2220GXXX 1825CXXX 2220H |
High Voltage MLC Chips
|
AVX Corporation
|
| 2220HC682KAT1A 2220HC682KAZ1A 2225SC683KAZ1A 1812G |
1210, 1825, 2225, 3640 X7R Dielectric, High Voltage MLC Chips, Capacitor
|
AVX Corporation
|
| LD20 LD40 LD10 LD13 LD12 LD06 LD08 |
High Voltage MLC Chips Tin/Lead Termination “B For 600V to 5000V Applications
High Voltage MLC Chips Tin/Lead Termination “B?For 600V to 5000V Applications
|
AVX Corporation
|
| 3VD045060JL |
Nchannel MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| OD-148-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
