| PART |
Description |
Maker |
| MGFS45V2527 |
2.5 - 2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET 2.5 - 2.7GHz频带功率30W国内MATCHD砷化镓场效应
2.5-2.7GHz BAND 30W INTERNALLY MATCHD GaAs FET
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGFC36V7177A |
7.1 - 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC36V7177A04 |
7.1 ~ 7.7GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| MGFX39V0717 |
10.7-11.7GHz Band 8W Internally MATCHD GaAs FET
|
Mitsubishi Electric Corporation
|
| MGFC40V7177A |
7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Corporation
|
| RFRX1702 |
GaAs MMIC IQ Downconverter 17.7GHz to 19.7GHz
|
RF Micro Devices
|
| TIM1011-15L |
P1dB=42.0dBm at 10.7GHz to 11.7GHz
|
Toshiba Corporation
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| 5021TR-B |
7GHz 1310nm DFB Transceiver
|
EMCORE
|
