| PART |
Description |
Maker |
| MX29LA128MBTC-90R MX29LA128MTTC-10 MX29LA128MBTC-1 |
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 90 ns, PDSO56
128M-BIT SINGLE VOLTAGE 3V ONLY BOOT SECTOR FLASH MEMORY 8M X 16 FLASH 3V PROM, 100 ns, PDSO56
|
Macronix International Co., Ltd.
MACRONIX INTERNATIONAL CO LTD
|
| UPD45128163G5-A75-9JF UPD45128841G5-A10B-9JF UPD45 |
128M-bit Synchronous DRAM 4-bank/ LVTTL
OSCILLATORS 100PPM -20 70 3.3V 4 18.432MHZ PD HCMOS 5X7MM 4PAD SMD 128兆位同步DRAM 4银行，LVTTL
128M-bit Synchronous DRAM 4-bank, LVTTL 128兆位同步DRAM 4银行，LVTTL
|
NEC Corp.
NEC, Corp.
|
| M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC |
64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5V26CF HY5V26CLF |
8Mx16|3.3V|4K|6/K/H/8/P/S|SDR SDRAM - 128M 8M × 16位| 3.3 | 4K的| 6/K/H/8/P/S |特别提款权的SDRAM - 128M
|
Vishay Intertechnology, Inc.
|
| MX23L12822 23L12822 |
128M-BIT MASK ROM (16/32 BIT OUTPUT)
From old datasheet system
|
Macronix 旺宏
|
| K9K2G08U0M-F K9K2G08U0M-V K9K2G08Q0M-P K9K2G08Q0M- |
256M x 8 Bit / 128M x 16 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| MC-4R256CPE6C-653 MC-4R256CPE6C-745 MC-4R256CPE6C- |
Direct Rambus?/a> DRAM RIMM?/a> Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus DRAM RIMM Module 256M-BYTE (128M-WORD x 16-BIT)
Direct Rambus垄芒 DRAM RIMM垄芒 Module 256M-BYTE (128M-WORD x 16-BIT)
|
http://
Elpida Memory
|
| MAX5234 MAX5234AEUB MAX5234BEUB MAX5234-MAX5235 MA |
Single-Supply 3V/5V / Voltage-Output / Dual / Precision 12-Bit DACs
Single-Supply 3V/5V, Voltage-Output, Dual, Precision 12-Bit DACs SERIAL INPUT LOADING, 10 us SETTLING TIME, 12-BIT DAC, PDSO10
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
Maxim Integrated Products, Inc.
|
| AD5384BBC-5REEL7 AD5384BBC-3REEL7 AD5384BBCZ-5 AD5 |
40-Channel, 3 V/5 V Single Supply,14-Bit, Serial Voltage-Output DAC; Package: CSPBGA (10x10x1.35); No of Pins: 100; Temperature Range: Industrial SERIAL INPUT LOADING, 8 us SETTLING TIME, 14-BIT DAC, PBGA100
40-Channel, 3 V/5 V, Single-Supply, Serial, 14-Bit Voltage Output DAC
|
ANALOG DEVICES INC
Analog Devices, Inc.
http://
|
| M6MGD137W3 M6MGD137W33TP |
The M6MGD137W33TP is a Stacked micro Multi Chip
Package (S- mMCP) that contents 128M-bit Flash memory
and 32M-bit Mobile RAM in a 52-pin TSOP.
|
RENESAS
|
