| PART |
Description |
Maker |
| BLA1011S-200 BLA1011-200 BLA1011-200.112 LA1011-20 |
Avionics LDMOS transistor BLA1011S-200<SOT502B (SOT502B)|<<http://www.nxp.com/packages/SOT502B.html<1<Always Pb-free,;
200 W LDMOS avionics power transistor for transmitter applications at frequencies from 1030 MHz to 1090 MHz.
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BLA6H1011-600 |
LDMOS avionics power transistor
|
Philips Semiconductors
|
| BLA1011-10 |
Avionics LDMOS transistor
|
Philips
|
| BLA1011-2 |
Avionics LDMOS transistor
|
Philips
|
| BLA1011-10 |
Avionics LDMOS transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| BLA1011-200 |
Avionics LDMOS transistor
|
Philips
|
| JTDA50 |
RF Power Transistors: AVIONICS
High power COMMON BASE bipolar transistor.
50 Watts, 36 Volts, Pulsed Avionics 960 - 1215 MHz
|
Advanced Power Technology
GHz Technology
GHZTECH
ETC
List of Unclassifed Manufacturers
|
| 1011LD110A |
110 Watts, 32 Volts Pulsed Avionics 1030 to 1090 MHz LDMOS FET
|
Microsemi Corporation
|
| DME500 |
RF Power Transistors: AVIONICS
500 Watts, 50 Volts, Pulsed Avionics 1025 - 1150 MHz high power COMMON BASE bipolar transistor.
From old datasheet system
|
Advanced Power Technology
GHZTECH[GHz Technology]
RFMD[RF Micro Devices]
RF Micro Devices, Inc.
|
| BLF4G20LS-110B |
From old datasheet system
UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| BLF6G27S-4508 BLF6G27S-45 BLF6G27-45 |
Product description45 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
WiMAX power LDMOS transistor
|
NXP Semiconductors N.V.
|
