| PART |
Description |
Maker |
| NAND08GW3C2BZL1E NAND16GW3C2BZL1E NAND08GW3C2BZL1F |
8 or 16 Gbit, 2112 byte page, 3 V supply, multilevel, multiplane, NAND Flash memory
|
Numonyx B.V
|
| NAND01G-N NAND01GR3N6 NAND01GR4N5 |
1 Gbit (x8/x16) 2112 Byte Page NAND Flash Memory and 512 Mbit (x16) LPSDRAM, 1.8V, Multi-Chip Package
|
Electronic Theatre Controls, Inc.
|
| AT45DB642 |
64M bit, 2.7-Volt Only Dual-Interface Flash with Two 1056-Byte SRAM Buffers.
|
Atmel
|
| NAND04GW3C2AN1E NAND04GA3C2A NAND04GA3C2AN1E NAND0 |
4Gbit, 2112 Byte Page, 3V, Multi-level NAND Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| A29DL324TG-90 A29DL324TV-90 A29DL324UG-90 |
32M-Bit CMOS Low Voltage Dual Operation Flash Memory 4M-Byte by 8-Bit (Byte Mode) / 2M-Word by 16-Bit (Word Mode)
|
http://
AMIC Technology Corporation
|
| TH58NS100DC |
1-GBIT (128M x 8 BITS) CMOS NAND E PROM (128M BYTE SmartMedia )
|
TOSHIBA
|
| UPD23C16380GZ-XXX-MJH UPD23C16340 UPD23C16340F9-BC |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
|
NEC[NEC]
|
| UPD23C32000ALGY-XXX-MKH UPD23C32000AL UPD23C32000A |
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE)
|
NEC[NEC]
|
| UPD23C64000JL UPD23C64000JLGX-XXX UPD23C64000JLGY- |
64M-BIT MASK-PROGRAMMABLE ROM 8M-WORD BY 8-BIT (BYTE MODE) / 4M-WORD BY 16-BIT (WORD MODE)
|
NEC[NEC]
|
| UPD23C16000BL UPD23C16000BLGX UPD23C16000BLGX-XXX |
16M-BIT MASK-PROGRAMMABLE ROM 2M-WORD BY 8-BIT (BYTE MODE) / 1M-WORD BY 16-BIT (WORD MODE)
|
NEC
|
| V23832-R111-M101 V23832-R311-M101 V23832-R511-M101 |
PAROLI 2 Tx AC, 1.6 Gbit/s
Parallel Optical Links (PAROLI) - PAROLI?2 Tx AC, 1.6 Gbit/s, multistandard electrical interface
Parallel Optical Links (PAROLI) - PAROLI?2 Rx AC, 1.6 Gbit/s,
PAROLI 2 Tx AC/ 2.7 Gbit/s
PAROLI 2 Tx AC/ 1.25 Gbit/s
PAROLI 2 Tx AC/ 1.6 Gbit/s
|
Infineon Technologies AG
|
