| PART |
Description |
Maker |
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| Q62702-G0042 BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BGA312 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 11 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz)
|
Siemens Semiconductor Group
|
| PE71S2017 |
SMA SPDT PIN Diode Switch Operating From 2 GHz to 26.5 GHz Up To 30 dBm
|
Pasternack Enterprises,...
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TA005-025-23-24 |
0.5 - 2.5 GHz 24 dBm Amplifier
|
Transcom, Inc.
|
| TA010-180-30-15 |
1 - 18 GHz 16 dBm Amplifier
|
Transcom, Inc.
|
| TA020-100-30-15 |
2 - 10 GHz 15 dBm Amplifier
|
Transcom, Inc.
|
| TA160-180-25-27 |
16 - 18 GHz 27 dBm Amplifier
|
Transcom, Inc.
|
| TA060-180-30-28 |
6 - 18 GHz 28 dBm Amplifier
|
Transcom, Inc.
|
| TM020-080-08-27 |
2 ~ 8 GHz 27 dBm Module
|
Transcom, Inc.
|
