PART |
Description |
Maker |
QM100HA-H QM100HY-H |
MITSUBISHI TRANSISTOR MODULES HIGH POWER SWITCHING USE INSULATED TYPE Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
|
VUB120-12NO2 VUB120-16NO2 VUB160-16NO2 VUB160-12NO |
Three Phase Rectifier Bridge with IGBT and Fast Recovery Diode for Braking System 140 A, 1200 V, N-CHANNEL IGBT Power Modules/Rectifier Bridge Modules: Three Phase Bridges with Dynamic Brake IGBT
|
IXYS, Corp. IXYS[IXYS Corporation]
|
CM600DY-12NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM200DY-24NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM1000DU-34NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM600HX-24A |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM400DU-12NFH CM400DU-12NFH09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM600HU-24F09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM400DY-34A09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM75DU-24F09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM75TU-12F09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|
CM100RL-24NF09 |
IGBT MODULES HIGH POWER SWITCHING USE
|
Mitsubishi Electric Semiconductor
|