PART |
Description |
Maker |
M59DR032A M59DR032B M59DR032A120ZB1T M59DR032A100Z |
2M X 16 FLASH 1.8V PROM, 120 ns, PBGA48 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory 32兆位Mb x16插槽,双行,第低压闪 32 Mbit 2Mb x16 / Dual Bank / Page Low Voltage Flash Memory 32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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http:// NUMONYX STMicroelectronics N.V. 意法半导 ST Microelectronics
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M45PE80 M45PE80-VMF6G M45PE80-VMF6P M45PE80-VMF6TG |
8 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface 8 Mbit / Low Voltage / Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface 4 Mbit Uniform Sector, Serial Flash Memory 4兆位统一部门,串行闪
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http:// STMICROELECTRONICS[STMicroelectronics] ST Microelectronics STMicroelectronics N.V.
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M59DR032A M59DR032A100N1T M59DR032A100N6T M59DR032 |
32 Mbit 2Mb x16, Dual Bank, Page Low Voltage Flash Memory
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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M45PE40 M45PE40-VMN6G M45PE40-VMN6P M45PE40-VMN6TG |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
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Numonyx B.V
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M45PE20-VMN6P M45PE20-VMN6TP M45PE20-VMP6G M45PE20 |
2 Mbit, Low Voltage, Page-Erasable Serial Flash Memory With Byte-Alterability and a 25 MHz SPI Bus Interface
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ST Microelectronics
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M45PE40-VMW6G M45PE40-VMW6P M45PE40-VMW6TG M45PE40 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte-alterability and a 50 MHz SPI bus interface
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Numonyx B.V
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M25PE40 M25PE40VMN6G M25PE40VMN6P M25PE40VMN6TG M2 |
4 Mbit, low voltage, Page-Erasable Serial Flash memory with byte alterability, 50 MHz SPI bus, standard pinout
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STMicroelectronics
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M25PE2007 M25PE20-VMN6G M25PE20-VMN6P M25PE20-VMN6 |
1 and 2 Mbit, low voltage, Page-Erasable Serial Flash memories with Byte-Alterability, 50 MHz SPI bus, standard pinout
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STMicroelectronics
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SST29EE020-120-4C-WH SST29LE020-250-4C-U2 SST29VE0 |
7.3728MHZ CRYSTAL -40/85''C FLUKE-741B 120 REFURBISHED BY NEWARK KJA 79C 79#22 PIN RECP 128Kx8 EEPROM PSoC® Mixed-Signal Array 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位256K × 8)页模式EEPROM DSUB 13X3 F PCR/A G 50OHM T 2兆位56K × 8)页模式的EEPROM IC SMD AN2135SC CONTROLLER USB 256K X 8 EEPROM 5V, 120 ns, PDSO32 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式的EEPROM 2 Mbit (256K x8) Page-Mode EEPROM 2兆位56K × 8)页模式EEPROM
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Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
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M29W064FB70N3E M29W064FB70N3F M29W064FT90N3E M29W0 |
64 Mbit (8 Mbit x 8 or 4 Mbit x 16, page, boot block) 3 V supply Flash memory
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Numonyx B.V
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NAND01GW4A2CZB1 NAND01GW4A2AZB1T NAND512R3A0AN1E N |
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories 128兆,256兆,512兆位千兆位(x8/x1628 Byte/264字的页面.8V/3V,NAND闪存芯片
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意法半导 STMicroelectronics N.V.
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