| PART |
Description |
Maker |
| MS8150-P2613 |
GaAs Schottky Devices Low RS Flip Chip
|
Microsemi Corporation
|
| MS8350-P2819 |
GaAs Schottky Diodes TM Low RS Series Pair
|
Microsemi Corporation
|
| TCM851 |
The TCM850/1/2/3 combines an inverting charge pump and a low noise linear regulator in a single small outline package. They are ideal for biasing GaAS FETs in cellular telephone transmitter power amplifiers All four devices accept a range
|
Microchip
|
| MS8250-P2920 |
GaAs Schottky Diodes Flip Chip Anti Parallel Low RS
|
Microsemi Corporation
|
| 0899 OH009 |
From old datasheet system
GaAs Hall Devices
|
Matsshita / Panasonic
|
| L76761CSYC |
The Super Bright Yellow source color devices are made with DH InGaAIP on GaAs substrate Light Emitting Diode.
|
Kingbright Electronic
KINGBRIGHT[Kingbright Corporation]
|
| CFB0303 |
L BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, HEMFET
High Dynamic Range Low Noise GaAs FET
|
MIMIX BROADBAND INC
MIMIX[Mimix Broadband]
|
| MGFC1403 MGFC1403-A12 |
For Microwave Low Noise Amplifiers N-Channel Schottky Barrier Gate Type
KU BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, JFET
FOR MICROWAVE LOW-NOISE AMPLIFIERS /N-CHANNEL SCHOTTKY BARRIER GATE TYPE
FOR MICROWAVE LOW-NOISE AMPLIFIERS,N-CHANNEL SCHOTTKY BARRIER GATE TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| MBR30150CT-Y |
Discrete Devices -Diode-Schottky
|
Taiwan Semiconductor
|
| MBRH24035 MBRH24020 |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
| MBRH12035R |
High Power Schottky Rectifiers - Half Pak Devices
|
America Semiconductor
|
