| PART |
Description |
Maker |
| EBE52UC8AAFV EBE52UC8AAFV-AE-E EBE52UC8AAFV-BE-E E |
512MB Unbuffered DDR2 SDRAM HYPER DIMM垄芒
512MB Unbuffered DDR2 SDRAM HYPER DIMM?/a>
128M X 64 DDR DRAM MODULE, 0.45 ns, DMA240
|
ELPIDA MEMORY INC
|
| EBE51UD8AGFA-6E-E EBE51UD8AGFA-4A-E |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 64 bits, 1 Rank)
|
Elpida Memory, Inc.
|
| EBE51ED8AEFA-6E-E EBE51ED8AEFA-6 |
512MB Unbuffered DDR2 SDRAM DIMM (64M words x 72 bits, 1 Rank)
|
ELPIDA[Elpida Memory]
|
| W3EG7264S-AD4 |
512MB - 2x32Mx72 DDR ECC SDRAM UNBUFFERED w/PLL 512MB 2x32Mx72的DDR ECC的内存缓冲瓦锁相
|
Optrex America, Inc.
|
| HYS64T128020GU-5-A HYS64T64000HU-5-A HYS64T64000GU |
240-Pin Unbuffered DDR2 SDRAM Modules
240-Pin Unbuffered DDR2 SDRAM Modules 240针无缓冲DDR2 SDRAM内存模块
CAPACITOR-CERAMIC
|
Infineon Technologies A...
Infineon Technologies AG
|
| M470L3324DU0-LB0 M470L2923DV0-LB0 M470L2923DV0-LB3 |
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模8 4针缓冲模块的512MBD为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模18 4针缓冲模块的512MB的D为基础的模6 TSOP-II
DDR SDRAM Unbuffered Module 18 4 pin Unbuffered Module based on 512Mb D-die 66 TSOP-II & 54 sTSOP-II with Pb-Free (RoHS compliant)
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY5PS12821FP HY5PS12421FP HY5PS12421FP-X HY5PS1216 |
DDR2 SDRAM - 512Mb
512Mb DDR2 SDRAM
|
HYNIX[Hynix Semiconductor]
|
| H5PS5182GFRC4I H5PS5182GFRE3I H5PS5182GFRS6C H5PS5 |
512Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| H5PS5162FFR-Y5 H5PS5162FFR-S6 H5PS5162FFR-C H5PS51 |
512Mb DDR2 SDRAM
|
Hynix Semiconductor
|
| SEN06464H2CH1MT-25R SEN06464H2CH1MT-30R |
512MB DDR2 ?SDRAM SO-DIMM
|
List of Unclassifed Man...
|
| K4T51043QB-ZCD5 K4T51163QB-GCD5 K4T51083QB-GCD5 K4 |
512Mb B-die DDR2 SDRAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
