PART |
Description |
Maker |
M464S6554BTS-CL7A M464S3354BTS M464S3354BTS-C7A M4 |
SDRAM Unbuffered SODIMM 内存缓冲SODIMM SDRAM Unbuffered SODIMM 内存缓冲的SODIMM
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
SHB211 |
2 DDR3 SODIMM support up to 8 GB
|
Axiomtek Co., Ltd.
|
M464S1724CT1-L1L_C1L M464S1724CT1-L1H_C1H M464S172 |
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Data sheet 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存4Banks4K的刷新,3.3V的同步DRAM的社民党 16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD 16Mx64M × 16位的SODIMM内存BanksK的刷新,3.3V的同步DRAM的社民党 16M X 64 SYNCHRONOUS DRAM MODULE, 6 ns, DMA144
|
Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|
MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
PFM-CVSREV.A PFM-CVS-A 1702002010 1701010150 17090 |
204-pin DDR3 800/1066 MHz SODIMM x 1, Up to 2 GB CRT, 18-bit Single Channel LVDS LCD
|
AAEON Technology
|
KT6464SSN0UBL-XX KT6464SSN3UBL-XX KT6464SSN |
SDRAM SODIMM MODULE
|
List of Unclassifed Manufacturers ETC
|
SDN06464D1BJ1SA-50 |
null512MB DDR SDRAM SoDIMM
|
List of Unclassifed Manufac...
|
SDN01G64D1BJ2SA-60 |
1024MB DDR SDRAM SoDIMM
|
List of Unclassifed Manufacturers
|
MT41J256M16 MT41J512M8 |
DDR3 SDRAM
|
Micon
|
HMT41GR7AFR8C |
DDR3 SDRAM
|
Hynix Semiconductor
|