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HN4B101J - Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

HN4B101J_4745139.PDF Datasheet


Part No.	HN4B101J
Description	Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)
File Size	239.71K / 6 Page
Maker	Toshiba, Corp. Toshiba Semiconductor
Homepage	http://www.semicon.toshiba.co.jp/eng/
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Full text search : Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

Product Description search : Zener Diode; Application: General; Pd (mW): 400; Vz (V): 4.9 to 5.1; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V):   ESD (kV) min: -; Package: MHD 硅晶体管进步 npn型外延式（厘进程 Transistor Silicon PNP / NPN Epitaxial Type (PCT Process)

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