| PART |
Description |
Maker |
| RP1215ADA RP12 RP241575ADA RP24110ADA |
ADA Strobe Retrofit Plate
|
Systemsensor advanced ideas.
|
| CM1200HC-66H |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| CM1200HA-50H |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| ADA-4643 |
ADA-4643 · Silicon Bipolar Darlington Amplifier
|
Agilent (Hewlett-Packard)
|
| QM5HG-24 |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE NON-INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| BAS28 Q62702-A77 |
FILTER BANDPASS 2.4GHZ SMD 硅开关二极管阵列（对于高速电气绝缘开关二极管
Silicon Switching Diode Array (For high-speed switching Electrically insulated diodes)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| QM100CY-H QM100 |
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| QM1000HA-24B |
HIGH POWER SWITCHING USE INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM1200HC-50H CM1200HC-50H09 |
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| QM15TD-H |
MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CM75TX-24S |
HIGH POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Semiconductor
|
| QM100HC-M |
HIGH POWER SWITCHING USE NON-INSULATED TYPE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
