| PART |
Description |
Maker |
| 1N659 1N660 FDLL659 1N661 1N746 1N963 1N3600 FDLL6 |
Ultra fast low capacitance diode. Working inverse voltage 50 V.
High speed high conductance diode. Working inverse voltage 175 V.
General purpose low diode. Working inverse voltage 100V.
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 5.1 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 7.0 Ohm, max zener voltage 6.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 23.0 Ohm, max zener voltage 3.9 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 11.0 Ohm, max zener voltage 5.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 24.0 Ohm, max zener voltage 3.6 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 22.0 Ohm, max zener voltage 4.3 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 5.0 Ohm, max zener voltage 6.8 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 8.0 Ohm, max zener voltage 8.2 V (Iz 20mA).
500 mW silicon linear diode. Max zener impedance 17.0 Ohm, max zener voltage 10.0 V (Iz 20mA).
General purpose low diode. Working inverse voltage 200V.
General Purpose Diodes
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
| K6T4008U1C-VF10 K6T4008V1C K6T4008U1C-MF10 K6T4008 |
POT 250K OHM 3/8 SQ CERM SL ST
POT 25K OHM 3/8 SQ CERM SL ST
512Kx8 bit Low Power and Low Voltage CMOS Static RAM 512Kx8位低功耗和低电压的CMOS静态RAM
|
http://
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Nihon Dempa Kogyo Co., Ltd.
Samsung Semiconductor Co., Ltd.
|
| FRJ-55 FRJ-50 |
Metal Film Resistors, Industrial, Zero Ohm Jumper Resistor
Industrial, Zero Ohm Jumper Resistor, Provides Low Resistance Circuit Interconnections, Color Band Marking, Flame Retardant Coating, Automatic Insertion Compatible, Tape and Reel Packaging
|
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
|
| PI5A4625 PI5A4625TEX PI5A4625TX PI5A4624TX PI5A462 |
SOTINY1-Ohm, Low-Voltage Single-Supply SPDT Switch
SOTINY 1-Ohm, Low-Voltage Single-Supply SPDT Switch
SOTINY 1-Ohm/ Low-Voltage Single-Supply SPDT Switch
SOTINY⑩ 1-Ohm, Low-Voltage Single-Supply SPDT Switch
|
Pericom Semiconductor Corp.
PERICOM[Pericom Semiconductor Corporation]
Pericom Technology
|
| SKY77910-11 |
SkyLiTE Tx-Rx FEM for Quad-Band GSM / GPRS EDGE w/ Eight Linear TRx Switch Ports, Dual-Band TD-SCDMA, and TDD LTE Band 39
Eight low insertion loss - high linearity TRx switch ports
|
Skyworks Solutions Inc.
|
| APT10090SLL APT10090BLL APT10090BLL_03 APT10090BLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD TO-247, 3 PIN
12 A, 1000 V, 0.9 ohm, N-CHANNEL, Si, POWER, MOSFET D3PAK-3
|
Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
|
| 74LVTH322245G 74LVT322245G 74LVTH322245 74LVT32224 |
Low Voltage 32-Bit Transceiver with 3-STATE Outputs and 25-Ohm Series Resistors in A Port Outputs
Low Voltage 32-Bit Transceiver with 3-STATE Outputs and 25 Ohm Series Resistors in A Port Outputs
Low Voltage 32-Bit Transceiver with 3-STATE Outputs and 25 Series Resistors in A Port Outputs
Low Voltage 32-Bit Transceiver with 3-STATE Outputs and 25з Series Resistors in A Port Outputs LVT SERIES, QUAD 8-BIT TRANSCEIVER, TRUE OUTPUT, PBGA96
Low Voltage 32-Bit Transceiver with 3-STATE Outputs and 25蟹 Series Resistors in A Port Outputs
16K SPI 2K X 8, 32B PAGE, 2.5V SER EE, -40C to 85C, 8-TSSOP, TUBE
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
FAIRCHILD SEMICONDUCTOR CORP
|
| ADG701BRJ-500RL7 ADG701BRJ-REEL ADG701BRJ-REEL7 AD |
4 Ohm, Low Voltage, Wide Bandwidth Single SPST in 6-ld SOT-23, NC
CMOS Low Voltage 2 Ω SPST Switch
|
Analog Devices
|
| APT10035B2FLL APT10035LFLL |
POWER MOS 7 1000V 28A 0.350 Ohm
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-19 RoHS Compliant: No
|
Advanced Power Technology Ltd.
|
| AFS5-10951175-09-10P-5 AFS42-04400510-07-10P-44 AF |
10950 MHz - 11750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
4400 MHz - 5100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
2200 MHz - 2300 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
1400 MHz - 1700 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
6700 MHz - 7100 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
700 MHz - 800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7900 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| AMFW-7S-122128-100P2 AMFW-7S-117128-65B AMFW-5S-12 |
8000 MHz - 8400 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
3700 MHz - 4200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
7250 MHz - 7750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
9600 MHz - 9800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11700 MHz - 12750 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
12200 MHz - 12750 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
7200 MHz - 7800 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
11400 MHz - 12200 MHz RF/MICROWAVE NARROW BAND LOW POWER AMPLIFIER
|
MITEQ INC
|
| APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
