PART |
Description |
Maker |
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
IRFF110 IRFF111 IRFF112 IRFF113 |
N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 3.0A. N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.0A. Power MOS Field-Effect Transistors N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 3.5A.
|
General Electric Solid State GE Solid State
|
MTM2N50 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor Products, Inc.
|
MRF1511T1 |
RF Power Field Effect Transistor
|
Freescale Semiconductor... FREESCALE[Freescale Semiconductor, Inc]
|
MRF8S26120HR3 MRF8S26120HSR3 |
RF Power Field Effect Transistor
|
Motorola
|
MTM15N20 |
Power Field Effect Transistor
|
New Jersey Semi-Conductor P...
|
MTH6N60 MTH6N55 |
Power Field Effect Transistor
|
New Jersey Semi-Conduct...
|
CMT01N6010 CMT01N60XN251 CMT01N60XN92 CMT01N60GN25 |
POWER FIELD EFFECT TRANSISTOR
|
Champion Microelectronic Corp. Champion Microelectroni...
|
MAPL-000817-015CPC |
RF Power Field Effect Transistor
|
Tyco Electronics
|
MTP6N10 |
POWER FIELD EFFECT TRANSISTOR
|
MOTOROLA[Motorola, Inc]
|