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M52S16161A - 512K x 16Bit x 2Banks Synchronous DRAM

M52S16161A_4802750.PDF Datasheet


 Full text search : 512K x 16Bit x 2Banks Synchronous DRAM


 Related Part Number
PART Description Maker
M52S16161A09 M52S16161A-8TG M52S16161A-8BG M52S161 512K x 16Bit x 2Banks Mobile Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
T431616C-7SG T431616C T431616C-6S T431616C-6SG T43 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
TMT[Taiwan Memory Technology]
M52D16161A-10BIG M52D16161A-10TIG M52D16161A-6BIG 512K x 16Bit x 2Banks Mobile Synchronous DRAM
Elite Semiconductor Memory ...
Elite Semiconductor Memory Technology Inc.
A43L0616AV-5.5 5.5ns; 183MHz/CL=3; 143MHz/CL=2; 512K x 16bit x 2banks synchronous DRAM
AMIC Technology
M12L16161A-5TIG M12L16161A-7BIG M12L16161A-7TIG M1 1M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO50
512K x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M12L32162A-5.5BG M12L32162A09 M12L32162A-5.5TG M12 1M x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M52D32162A-10BG M52D32162A-10TG M52D32162A-7.5BG M 1M x 16Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
M52S32321A-7.5BG M52S32321A M52S32321A-10BG M52S32 512K x 32Bit x 2Banks Synchronous DRAM
Elite Semiconductor Memory Technology Inc.
N08L6182AB27I N08L6182AB27IT N08L6182AB7I N08L6182 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K 隆驴 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K ? 16bit
8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16bit
8 Mb, 1.8 V Low Power SRAM; Package: BGA Green; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
8 Mb, 1.8 V Low Power SRAM; Package: BGA; No of Pins: 48; Container: Tray; Qty per Container: 300 512K X 16 STANDARD SRAM, 85 ns, PBGA48
ON Semiconductor
K4S161622D K4S161622D-TC/L10 K4S161622D-TC/L55 K4S 512K x 16Bit x 2 Banks Synchronous DRAM
Samsung Electronic
Samsung semiconductor
 
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