| PART |
Description |
Maker |
| 2SJ506S |
Hight Speed Power Switching
|
Guangdong Kexin Industrial Co.,Ltd
|
| SE2004-DC90A |
Hight Speed Thermal Printhead (8dots / mm)
|
Rohm
|
| SE2003-DC90A |
Hight Speed Thermal Printhead (8dots / mm)
|
ROHM[Rohm]
|
| SE2002-DC94A |
Hight Speed Thermal Printhead (8dots / mm)
|
Rohm
|
| SIGC25T60UN Q67041-A4667-A001 SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
| FS50UMJ-3 |
Power MOSFETs: FS Series, Low Voltage, 150V for High-Speed Switching Use
Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
|
| PG985C6R |
Super LLD III (For CCM-PFC) Low Loss Super Hight Speed Rectifier
|
Fuji Electric
|
| 2SJ553 2SJ553L 2SJ553S |
Power switching MOSFET
Silicon P Channel MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
| 2SK1365 E001341 K1365 |
FET, Silicon N Channel MOS Type(for High Speed, High Current Switching, Switching Power Supply)
HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS SWITCHING POWER SUPPLY APPLICATIONS
From old datasheet system
FET/ Silicon N Channel MOS Type(for High Speed/ High Current Switching/ Switching Power Supply)
|
Toshiba Corporation
Toshiba Semiconductor
|
| FS10VS-14A |
Nch POWER MOSFET HIGH-SPEED SWITCHING USE 10 A, 700 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET
MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE
|
Powerex, Inc.
Powerex Power
Mitsubishi Electric Corporation
|
