| PART |
Description |
Maker |
| 3VD297650YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD393600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics Joint-stock
|
| 3VD156600YL |
HIGH VOLTAGE MOSFET CHIPS
|
Silan Microelectronics
|
| 1206GA150JAT1A 1808AA105JA11A 1808GC223JA11A 1808H |
CAP 15PF 2000V 5% NP0(C0G) SMD-1206 TR-7 PLATED-NI/SN CAPACITOR, CERAMIC, MULTILAYER, 2000 V, C0G, 0.000015 uF, SURFACE MOUNT, 1206
High Voltage MLC Chips For 600V to 5000V Application
High Voltage MLC Chips For 600V to 5000V Application
|
AVX, Corp.
AVX Corporation
|
| SSB-COB6527GW |
65mm x 27mm VIEW AREA, CHIP ON BOARD LED BACKLIGHT, 565mm GREEN CHIPS, 44 CHIPS, 4.2V 220mA
|
LUMEX INC.
|
| 3VD037060NEJL |
N-CH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
|
Silan Microelectronics Joint-stock
|
| 3VD060060NEJL |
NCH MOSFET CHIPS WITH ESD PROTECTED STRUCTURE
|
Silan Microelectronics Joint-stock
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| AUIRS2112S |
The AUIRS2112S is a high voltage, high speed power MOSFET and IGBT driver with independent high- and lowside referenced output channels.
|
International Rectifier
|
| T497C685M010BT6215 T497 T497A106K006AH6110 T497A10 |
HIGH GRADE COTS TANTALUM CHIPS
|
KEMET[Kemet Corporation]
|
| OD-880-C |
HIGH-POWER GaAlAs IR EMITTER CHIPS
|
OptoDiode Corp
|
| KPA1750 |
Dual MOSFET chips in small package 4V Gate Drive Type and Low On-Resistance
|
TY Semiconductor Co., Ltd
|
