PART |
Description |
Maker |
27C4100 27C4096 MX27C4096 MX27C4096PI-12 MX27C4096 |
(MX27C4100 / MX27C4096) 4M-BIT [512K x 8/256K x 16] CMOS EPROM 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 120 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 100 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDIP40 4M-BIT [512K x 8/256K x 16] CMOS EPROM 256K X 16 OTPROM, 150 ns, PDSO40 Single Output LDO, 50mA, Fixed(3.0V), Low Quiescent Current, Thermal Protection 5-SOT-23 256K X 16 OTPROM, 100 ns, PDIP40
|
Macronix International Co., Ltd.
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HN27C256G HN27C256G-17 HN27C256G-25 HN27C256G-20 |
256K (32K x 8-bit) UV EPROM, 200ns 256K (32K x 8-bit) UV EPROM, 250ns 32768-WORD x 8-BIT CMOS UV ERASABLE AND PROGRAMMABLE ROM 256K (32K x 8-bit) UV EPROM, 170ns
|
Hitachi Semiconductor
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IDT71V416YS15YGI IDT71V416YS IDT71V416YL10BEG IDT7 |
3.3V 256K x 16 Static RAM Center Pwr & Gnd Pinout 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 3.3V的CMOS静态RAM 4梅格56K x 16位) 3.3V CMOS Static RAM 4 Meg (256K x 16-Bit) 256K X 16 STANDARD SRAM, 12 ns, PDSO44
|
IDT[Integrated Device Technology] Integrated Device Technology, Inc.
|
MH16S64BAMD-6 |
1 /073 /741 /824-BIT ( 16 /777 /216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM 1073741824位(16,777,21664位)同步动态随机存储器
|
Mitsubishi Electric Corporation Mitsubishi Electric, Corp.
|
MH16S72PHB-6 B99032 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM From old datasheet system 1 /207 /959 /552-BIT ( 16 /777 /216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH16S72DCFA-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
http://
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MH16S64PHB-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
MH16S72BAMD-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
Mitsubishi Electric Corporation
|
MH16S72AVJB-6 |
1,207,959,552-BIT ( 16,777,216-WORD BY 72-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH16S64BAMD-6 B99029 |
From old datasheet system 1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH16D64AKQC-75 MH16D64AKQC-10 |
1,073,741,824-BIT (16,777,216-WORD BY 64-BIT) Double Data Rate Synchronous DRAM Module
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
MH16M40AJD-6 MH16M40AJD |
FAST PAGE MODE ( 16 /777 /216-WORD BY 40-BIT ) DYNAMIC RAM FAST PAGE MODE ( 16,777,216-WORD BY 40-BIT ) DYNAMIC RAM From old datasheet system
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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