| PART |
Description |
Maker |
| MB60101BAN MB60101BBN MB60101DAN MB87101DAN MB8710 |
MA/MB Series - High Frequency Ceramic Capacitors
(MA Series) High Frequency Ceramic Capacitors
CAP,CERAMIC,10PF,1-% TOL,1 % TOL,P90-TC CODE,90PPM-TC
HIGH FREQUENCY CERAMIC CAPACITORS
|
Murata Electronics North America Inc
MURATA[Murata Manufacturing Co., Ltd.]
http://
Murata Manufacturing Co., L...
Murata Manufacturing Co...
|
| FD1000FX-90 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE
|
Mitsubishi Electric Corporation
|
| HKQ0603S1N4S-T-19 |
High-Q Multilayer Chip Inductors for High Frequency Applications (HK series Q type)[HKQ-S]
|
Taiyo Yuden (U.S.A.), I...
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| 201R15C1R0A6T 201R15C1R0AV4T 201R15C1R0B6T 250R15C |
C-SERIES HIGH FREQUENCY CHIP CAPACITORS C系列高频电容
|
Electronic Theatre Controls, Inc.
|
| HK10057N5J-T |
Multilayer Chip Inductors for High Frequency Applications (HK series)
|
Taiyo Yuden (U.S.A.), Inc
|
| LQW2BHXXXX LQW31HXXXX LQW31HN8N8J03L |
(LQW31H / LQW2BH Series) High Frequency Winding Type
|
Murata Electronics
|
| PA0576 PA0526 PA0442 PA0581 |
HIGH FREQUENCY PLANAR TRANSFORMERS Prism Series (up to 250W)
|
Pulse A Technitrol Company
|
| 3VSK1 3VSK111 3VSK3 20VSK6 30VSK6C 3VSK7 3ESK1 3ES |
High Performance K Series RFI Line Filters for SMPS Emission Control
Power Line SK (High Performance) Series
Power Line SK Series
|
Tyco Electronics
TE Connectivity Ltd
|
| APT30DS60BG APT30DS60S |
2-300V HIGH FREQUENCY SOFT RECOVERY RECTIFIER DIODES IN SERIES
|
Microsemi Corporation
|
| FF300R12KS4 |
62mm C-series module with the fast IGBT2 for high-frequency switching
|
Infineon Technologies AG
|
