| PART |
Description |
Maker |
| TM060-180-10-14 |
6 - 18 GHz 14 dBm Gain Module
|
Transcom, Inc.
|
| TM060-180-09-26 |
6-18 GHz 26 dBm Gain Module
|
Transcom, Inc.
|
| Q62702-G0041 BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| BGA310 |
Silicon Bipolar MMIC-Amplifier (Cascadable 50 W-gain block 9 dB typical gain at 1.0 GHz 9 dBm typical P-1dB at 1.0 GHz 3 dB-bandwidth: DC to 2.4 GHz)
|
Siemens Semiconductor Group
|
| TM020-040-16-20 |
2 - 4 GHz 20 dBm Module
2 ? 4 GHz 20 dBm Module
|
Transcom, Inc.
|
| TM020-040-18-24 |
2 - 4 GHz 24 dBm Module
|
Transcom, Inc.
|
| TM059-070-11-33 |
5.9 - 7.0 GHz 33 dBm Power Module
|
Transcom, Inc.
|
| TM120-155-07-29 |
12 - 15.5 GHz 29 dBm Power Module
|
Transcom, Inc.
|
| TM053-059-11-36 |
5.3 - 5.9 GHz 36 dBm Power Module
|
Transcom, Inc.
|
| TIM1414-2-252 |
HIGH POWER P1dB=33.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
| TA005-025-25-20 |
0.5 - 2.5 GHz 20 dBm Amplifier
|
Transcom, Inc.
|
