| PART |
Description |
Maker |
| PS21962-ST |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21962-T09 PS21962-AT PS21962-CT PS21962-T PS2196 |
600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-ST |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion.
|
Mitsubishi Electric Semiconductor
|
| PS21964-4A PS21964-4 PS21964-4C PS21964-4W |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| PS21964-ST |
600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PS21963-A |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
| PQ1L333M2SP PQ1LXX3M2SP PQ1L253M2SP PQ1L303M2SP PQ |
LOW POWER-LOSS VOLTAGE REGULATOR 低功率损耗的电压调节
Compact Surface Mount Type, Low Output Current, Low Power-Loss Voltage Regulators
|
Sharp, Corp.
SHARP[Sharp Electrionic Components]
|
| APT6013B2LL APT6013LLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS V 600V 43A 0.130 Ohm
|
Advanced Power Technology
|
| APT6021BFLL APT6021SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗，高电压，N沟道增强型功率MOSFET的新一代
POWER MOS 7 600V 29A 0.210 Ohm
|
Advanced Power Technology, Ltd.
|
| IRGSL4B60K IRGB4B60K IRGS4B60K |
600V Low VCEon Copack IGBT in a TO-262 package
600V Low VCEon Copack IGBT in a D2Pak package
600V Low VCEon Copack IGBT in a TO-220 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
