| PART |
Description |
Maker |
| BA3518F-T1 BA3528FP-T1 BA3506AFT1 BA3506AFE1 BA350 |
0.031 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO16 SOP-16
0.034 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO28 HSOP-28
0.069 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
0.04 W, 2 CHANNEL, AUDIO AMPLIFIER, PDSO18
5.4 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM12
5.2 W, 2 CHANNEL, AUDIO AMPLIFIER, PSFM10
|
Intel, Corp.
|
| BA3314 BA3314F A5800808 |
Audio LSIs > Pre amplifier/Line amplifier > Pre amplifier
Dual preamplifier with ALC detector circuit
From old datasheet system
|
ROHM[Rohm]
|
| 2SA1932 |
POWER AMPLIFIER APPLICATIONS DRIBVER STAGE AMPLIFIER APPLICATIONS
TRANSISTOR SILICON PNP EPITAXIAL TYPE (PCT PROCESS) POWER AMPLIFIER AND DRIVER STAGE AMPLIFIER APPLICATIONS
|
Toshiba Semiconductor
|
| ADR3410 |
50 ?High Linearity 1 Watt Amplifier
50 蟹 High Linearity 1 Watt Amplifier
50 з High Linearity 1 Watt Amplifier
The ADR3410 is a high performance, single-stage InGaP HBT amplifier designed for use in wireless infrastructure systems as a highly ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| GC509 GC509-CHIP GC509-MCRO |
AUDIO AMPLIFIER, PDSO10
GC509 - Class A Amplifier with 3 Independent Gain Blocks GC509 - A类放大器3独立增益模块
AUDIO AMPLIFIER, UUC10
|
GENNUM[Gennum Corporation]
Samsung Semiconductor Co., Ltd.
|
| 2SA1015L A1015 2SA1015 |
PNP EPITAXIAL TYPE(AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER, DRIVER STAGE AMPLIFIER)
Transistor Silicon PNP Epitaxial Type (PCT process) Audio Frequency Amplifier Applications Low Noise Amplifier Applications
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
|
| LT1167ACN8 LT1167ACS8 LT1167CN8 LT1167CS8 LT1167IN |
Single Resistor Gain Programmable/ Precision Instrumentation Amplifier
Precision Instrumentation Amplifier INSTRUMENTATION AMPLIFIER, 100 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
TRANS NPN 100VCEO .5A TO-126
|
Linear Technology, Corp.
Linear Technology Corporation
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| BA3313L A5801026 |
Dual preamplifier with ALC detector circuit
From old datasheet system
Audio LSIs > Pre amplifier/Line amplifier > Pre amplifier
|
Rohm
|
| FH103 1283 |
High-Frequency Low-Noise Amplifier/ Differential Amplifier Applications
NPN Epitaxial Planar Silicon Composite Transistor
From old datasheet system
High-Frequency Low-Noise Amplifier, Differential Amplifier Applications
|
Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
|
| 2SA1425 E000527 |
TRANSISTOR (POWER AMPLIFIER/ DRIVER STAGE AMPLIFIER APPLICATIONS)
From old datasheet system
TRANSISTOR (POWER AMPLIFIER, DRIVER STAGE AMPLIFIER APPLICATIONS) 晶体管（功率放大器，放大器的驱动程序
|
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
