| PART |
Description |
Maker |
| IS42S32800B-7T IS42S32800B-6T IS42S32800B-6BI IS42 |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PBGA90
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM 8M X 32 SYNCHRONOUS DRAM, 5.5 ns, PDSO86
|
Integrated Silicon Solution, Inc.
|
| HYB39S256800T-8B HYB39S256400T-8B HYB39S256800T-10 |
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 7 ns, PDSO54
256 MBit Synchronous DRAM 32M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
|
Siemens Semiconductor Group
SIEMENS AG
|
| IS42S16160-7BL IS42S16160-6BLI |
256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solu...
|
| HYB39SC256160FE-6 HYB39SC256160FE-7 HYB39SC256160F |
256-MBit Synchronous DRAM
|
Qimonda AG
|
| IS42S16160D IS42S16160D-6B IS42S16160D-6BI IS42S16 |
32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM
|
Integrated Silicon Solution, Inc
|
| HYB39S256160CT |
256-Mbit(4banks × 4MBit × 16) Synchronous DRAM(256M(4× 4M× 16)同步动态RAM)
|
SIEMENS AG
|
| HYB39S256400DC-6 HYB39S256400DC-7 HYB39S256400DC-7 |
SDRAM Components - 256Mb (64Mx4) PC133 2-2-2
256 MBit Synchronous DRAM
|
INFINEON[Infineon Technologies AG]
|
| HYB39L256160AC HYB39L256160AC-8 HYB39L256160AT-7.5 |
Specialty DRAMs - 256M (16Mx16) 133MHz 3-3-3
256 MBit Synchronous Low-Power DRAM
|
Infineon Technologies AG
|
| HYB39SC128160FE-6 HYI39SC128160FE-6 |
128-MBit Synchronous DRAM 8M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
Qimonda AG
|
| HYB18T256324F-22 HYB18T256324F-16 HYB18T256324F-20 |
256-Mbit GDDR3 DRAM [600MHz]
|
INFINEON[Infineon Technologies AG]
|
| HYB314175BJ-50- HYB314175BJL-50 HYB314175BJ-60 HYB |
High-Speed Fully-Differential Amplifiers 8-MSOP-PowerPAD -40 to 85 3.3V56亩16位江户的DRAM 3.3V56亩16位江户与DRAM的低功率版本自刷
3.3V 256 K x 16-Bit EDO-DRAM 3.3V 256 K x 16-Bit EDO-DRAM Low power version with Self Refresh
3.3V 256 K x 16-Bit EDO-DRAM(3.3V 256K×16外延式数据输出（EDO)动态RAM)
|
http://
SIEMENS AG
|
| HYB39S64160AT HYB39S64160AT-8B HYB39S64160AT-10 HY |
64 MBit Synchronous DRAM
|
Siemens Semiconductor Group
|
