PART |
Description |
Maker |
OP705D OP705A OP705B OP705C |
NPN Pho to tran sistor with Base-Emit ter Resistor
|
OPTEK[OPTEK Technologies]
|
NESG2101M05-T1 NESG2101M05 |
NECs NPN SiGe HIGH FREQUENCY TRAN SIS TOR
|
NEC Corp. NEC[NEC]
|
2SC4245 E000921 |
NPN EPITAXIAL PLANAR TYPE (TV TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS From old datasheet system TV TUNER, UHF MIXER APPLICATIONS VHF~UHF BAND RF AMPLIFIER APPLICATIONS
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TOSHIBA[Toshiba Semiconductor]
|
KDV153 KDV153A KDV153B KDV153D |
TV VHF, UHF tuner AFC VCO for UHF band radio VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(TV VHF,UHF TUNER AFC VCO FOR UHF BAND RADIO)
|
Korea Electronics (KEC) KEC[KEC(Korea Electronics)]
|
2SC3862 E000891 |
From old datasheet system NPN EPITAXIAL PLANAR TYPE (TY TUNER, UHF MIXER, VHF~UHF BAND RF AMPLIFIER APPLICATIONS
|
TOSHIBA[Toshiba Semiconductor]
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
|
MPSH10 MPSH11 ON2346 MPSH10-D |
VHF/UHF Transistors NPN Silicon CASE 294, STYLE 2 TO2 (TO26AA) From old datasheet system VHF/UHF Transistors(NPN Silicon) (MPSH10 / MPSH11) VHF/UHF Transistors
|
MOTOROLA[Motorola, Inc] ONSEMI[ON Semiconductor]
|
2SC4245 |
Transistor Silicon NPN Epitaxial Planar Type TV Tuner, UHF Mixer Applications VHF~UHF Band RF Amplifier Applications
|
TOSHIBA
|
RX2A RX2A-433-10 RX2A-433-64 |
UHF FM receiver module with RSSI UHF FM Data Transmitter and Receiver Modules
|
Radiometrix Ltd
|
MS1582 |
UHF 860-960 MHz, Class A/AB, Common Emitter; fO (MHz): 0; P(out) (W): 25; Gain (dB): 9; Vcc (V): 25; ICQ (A): 3.2; IMD Type (dB): -45; Case Style: M173 UHF BAND, Si, NPN, RF POWER TRANSISTOR
|
Microsemi, Corp.
|
KV2101 KV2001 KV2501-15 KV2501-00 KV2801 KV2801-30 |
VARACTOR DIODES HF/VHF/UHF Hyperabrupt Junction UHF BAND, 50 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 200 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE UHF BAND, 155 pF, 22 V, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE
|
Microsemi Corporation MICROSEMI CORP-LOWELL
|