| PART |
Description |
Maker |
| N-08-18-0-M-LC 0192520135 |
195.58mm (7.700) UV Black Cable Tie, 18 Pound Tensile Strength, 1000/Bag
195.58mm (7.700") UV Black Cable Tie, 18 Pound Tensile Strength, 1000/Bag
|
Molex Electronics Ltd.
|
| IRFSL3004PBF IRFS3004PBF IRFB3004PBF IRFS3004TRL I |
HEXFET Power MOSFET
195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
195 A, 40 V, 0.00175 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
High Efficiency Synchronous Rectification in SMPS
|
International Rectifier
http://
|
| TBC23-12EGWA |
58mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY
|
Kingbright Corporation.
KINGBRIGHT[Kingbright Corporation]
Kingbright Electronic
|
| TC23-11YWA |
58mm (2.3 INCH) 8x8 DOT MATRIX DISPLAY
|
Kingbright Corporation
|
| 0877159901 87715-9901 |
Phosphor Bronze, 0.38μm (15μ) Gold (Au) Plating, with Plastic Pegs, 2.54mm (.100)Soldertail, PCB Thickness 1.58mm (.062), 26 Circuits, Lead Free
Phosphor Bronze, 0.38渭m (15渭") Gold (Au) Plating, with Plastic Pegs, 2.54mm (.100")Soldertail, PCB Thickness 1.58mm (.062"), 26 Circuits, Lead Free
|
Molex Electronics Ltd.
|
| OPB771NZ OPB772NZ OPB773NZ OPB770NZ |
POSITION, LINEAR SENSOR-DIFFUSE, 2.03-5.58mm, 10mA, RECTANGULAR, PANEL MOUNT ROHS COMPLIANT, PACKAGE, 5 PIN
|
TT electronics OPTEK Technology
|
| 1203-31-9 |
FOR USE WITH BELDEN RF 195 CABLE
|
Winchester Electronics Corp...
|
| FRS130H FRS130R FRS130D FN3219 |
12A/ 100V/ 0.195 Ohm/ Rad Hard/ N-Channel Power MOSFETs
12A, 100V, 0.195 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system
|
Intersil Corporation
|
| AUIRFS3107TRR |
195 A, 75 V, 0.003 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
|
| LD7217W LD7217S LD7217 |
6 GHz, 600 W/700 W CW, PPM FOCUSING, HIGH POWER GAIN 6千兆赫，600 W/700 W连续，分之为重点，高功率增益
6 GHz / 600 W/700 W CW / PPM FOCUSING / HIGH POWER GAIN
6 GHz 600 W/700 W CW PPM FOCUSING HIGH POWER GAIN
|
NEC, Corp.
NEC[NEC]
|
| OSC-13SH OSC-1.3SH |
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 纭??灏??????朵?绠?Ic: 700 mA,Vce: 30 V))
NPN Silicon RF Power Transistor(Ic: 700 mA,Vce: 30 V)(NPN 硅型射频功率晶体Ic: 700 mA,Vce: 30 V))
|
ADVANCED SEMICONDUCTOR INC
Advanced Semiconductor, Inc.
|
| 87705-7911 0877057911 |
1.00mm (.039) Pitch DDR-II DIMM 240 Circuits Socket, Vertical, 1.8 Voltage, 2.54mm (.100) Tail Length, Black Latches, Nylon 4/6 Glass-filled, Black Housing
|
Molex Electronics Ltd.
|
|
