| PART |
Description |
Maker |
| SGB15N60HS06 |
High Speed IGBT in NPT-technology
|
Infineon Technologies AG
|
| APT20GN60B APT20GN60BG APT20GN60S APT20GN60SG |
Thunderbolt High Speed NPT IGBT
|
Microsemi Corporation
|
| SIGC14T60SNC |
IGBT Chip in NPT-technology 600V NPT technology 100渭m chip short circuit prove
|
Infineon Technologies AG
|
| SGW30N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SKB15N60HS07 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| SIGC81T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| SIGC07T60SNC |
IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient
|
Infineon Technologies AG
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IXDH30N120D1 IXDT30N120D1 IXDH30N120 IXDT30N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| IXDN55N120D1 IXDN55N120 |
IGBT Discretes: NPT IGBT
High Voltage IGBT with optional Diode
|
IXYS[IXYS Corporation]
|
| SIGC25T120CS2 |
IGBT Chip in NPT-technology
|
Infineon Technologies AG
|
