PART |
Description |
Maker |
JS28F128J3D-75 JS28F320J3D-75 PC28F128J3D-75 TE28F |
Numonyx?/a> Embedded Flash Memory (J3 v. D) Numonyx Embedded Flash Memory (J3 v. D)
|
Intel Corporation Numonyx B.V
|
GE28F640L18 |
Wireless Flash Memory
|
Intel Corporation
|
BP3599 |
Wireless LAN Module with Flash Memory
|
ROHM
|
RD38F201000ZBQ0 RF38F201000ZBQ0 RD38F101000ZBQ0 RF |
Wireless Flash Memory (W18/W30 SCSP)
|
Numonyx B.V
|
PC48F4400P0VB00 RC28F640P30B85 JS28F640P30B85 RC28 |
Numonyx StrataFlash Embedded Memory
|
Numonyx B.V
|
BAS16 BAS16/T1 BAS16W/T1 |
DIODE KLEINSIGNAL SMD 贴片二极管KLEINSIGNAL CY7C603xx Wireless; Memory Size: 8K; RAM: 512B; Vcc (V): 2.4-3.6V; Core: M8C; Code Memory Architecture: Flash; Development Kit: CY3656 二极管采用SOT 323 SCHALT High-speed diode
|
Won-Top Electronics Co., Ltd. Philips Semiconductors NXP Semiconductors
|
TE28F160B3T90 28F008B3 28F016B3 28F032B3 28F320B3 |
(TE28F Series) SMART 3 ADVANCED BOOT BLOCK 4-8-16-32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 3V PROM, 110 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 2.7V PROM, 90 ns, PDSO48 RES 10K-OHM 2% 0.25W 100PPM MET-FILM AXIAL TR-13 R-MIL-PRF-39017 智能高级启动34 - - 6 - 2 - Mbit闪存家庭 TVS UNI-DIR 70V 400W SMA 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 512K X 16 FLASH 3V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 2 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 2M X 16 FLASH 2.7V PROM, 90 ns, PBGA48 SMART 3 ADVANCED BOOT BLOCK 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY 智能高级启动3 - - 6 - 32 - Mbit闪存家庭 SMART 3 ADVANCED BOOT BLOCK, 4-, 8-, 16-, 32-MBIT FLASH MEMORY FAMILY SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE, 8-MBIT (1024K x 8), 16-MBIT (2056K x 8) FLASH MEMORY FAMILY
|
TE Connectivity, Ltd. Intel, Corp. Intel Corp. Intel Corporation
|
CY7C60323-LTXC CY7C60323-PVXC CY7C60323-LTXCT CY7C |
enCoRe III Low Voltage Wireless presenter tools enCoRe?/a> III Low Voltage Wireless presenter tools enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B MULTIFUNCTION PERIPHERAL, QCC32 enCoRe(TM) III Low Voltage; Core: M8C; Code Memory Architecture: Flash; Code Memory Size: 8 KB; RAM size: 512 B
|
Cypress Semiconductor, Corp. CYPRESS SEMICONDUCTOR CORP
|
RD48F3000L0ZTQ0 |
1.8 Volt Intel StrataFlashWireless Memory with 3.0-Volt I/O (L30) 8M X 16 FLASH 1.8V PROM, PBGA80
|
Intel, Corp.
|
LH28F008SCHT LH28F008SCHT-85 LH28F008SCN-L120 LH28 |
8MBIT (1 MB x 8)Smart Voltage Flash Memory 40pin STSOP 8Mbit Flash Memory 8-MBIT(1 MB x 8) SmartVoltage Flash MEMORY 8MBIT (1 MB x 8)Smart Voltage Flash Memory 44pin PSOP
|
Sharp Electrionic Components
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
AM29LV160MB70RPCI AM29LV160MT85WAI AM29LV160MB90EI |
Flash Memory IC 1M X 16 FLASH 3V PROM, 90 ns, PDSO48 16 Megabit (2 M x 8-Bit/1 M x 16-Bit) MirrorBit TM 3.0 Volt-only Boot Sector Flash Memory
|
Spansion, Inc. Advanced Micro Devices
|
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