| PART |
Description |
Maker |
| EIA1718A-2P |
17.3-18.1GHz, 2W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| EIA1415B-8P |
14.9-15.1GHz, 8W Internally Matched Power FET
|
Excelics Semiconductor, Inc.
|
| D2231UK D2229UK D2230 D2230UK D2231 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2202UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| D2230UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET 金属门射频硅场效应管
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
| CVCSO-914-1000 |
Ultra-Low Phase Noise 1GHz SAW VCSO
Ultra-Low Phase Noise 1GHz SAW VCSO
|
Crystek Corporation
|
| ADG918BCP ADG919BCP ADG919 ADG918 ADG918BRM ADG919 |
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches 宽带，四三分贝隔GHz时的CMOS 1.65 V.75V的，2:1复用/ SPDT开
Wideband 43dB Isolation 1GHz CMOS 1.65 V to 2.75V 2:1 Mux/SPDT Switches
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
|
Analog Devices, Inc.
AD[Analog Devices]
|
| TSH690 TSH690ID |
40MHz to 1GHz AMPLIFIER
|
STMicroelectronics
|
| NE600 |
1GHz LNA and mixer
|
Philips Semiconductors
|
| SP4633NADP SP4633 |
1GHz 64 NON SELF OSCILLATING PRESCALER
|
Zarlink Semiconductor Inc
|
| BC2102 |
Sub-1GHz OOK/FSK Transmitter
|
Holtek Semiconductor In...
|
