| PART |
Description |
Maker |
| EIB1718A-2P |
17.3-18.1GHz, 1W internally matched power FET
|
Excelics Semiconductor
|
| SP8782 SP8782A SP8782ADG SP8782BMP DES9208901AC DE |
6.0V; 1GHz 16/17, 32/33 multi-modulus divider
1GHz ± 16/17, ±32/33 Multi-Modulus Divider 1GHz的16/17，32/33多模数分频器
TV 4C 4#16 PIN WALL RECP 1GHz的16/17，32/33多模数分频器
1GHz 16/17/ 32/33 Multi-Modulus Divider
1GHz 16/17 / 32/33 Multi-Modulus Divider
1GHz 16/17 32/33 Multi-Modulus Divider
1GHz 16/17, 32/33 Multi-Modulus Divider
1GHz 梅 16/17, 梅32/33 Multi-Modulus Divider
1GHz ÷ 16/17, ÷32/33 Multi-Modulus Divider
|
Mitel Networks, Corp.
MITEL[Mitel Networks Corporation]
Mitel Semiconductor
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D2219UK D2219 |
METAL GATE RF SILICON FET UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| D2020UK D1211 D1211UK D2019 D2019UK |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| D2218UK |
CAT6 SOL PC PVC WHI 50FT PVC SOLID PATCH CORD UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
METAL GATE RF SILICON FET
|
TT electronics Semelab, Ltd.
TT electronics Semelab Limited
Semelab(Magnatec)
Seme LAB
|
| SY89834U SY89834UMI SY89834UMITR |
2.5V/3.3V TWO INPUT , 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR 2.5V/3.3V的两个INPUT1GHz的LVTTL / CMOS电到的LVPECL 1:4扇出缓冲翻译
2.5V/3.3V TWO INPUT 1GHz LVTTL/CMOS-TO-LVPECL 1:4 FANOUT BUFFER/TRANSLATOR
|
Micrel Semiconductor, Inc.
MICREL[Micrel Semiconductor]
|
| ADG918BCP ADG919BCP ADG919 ADG918 ADG918BRM ADG919 |
Wideband, 43dB Isolation 1GHz, CMOS 1.65 V to 2.75V, 2:1 Mux/SPDT Switches 宽带，四三分贝隔GHz时的CMOS 1.65 V.75V的，2:1复用/ SPDT开
Wideband 43dB Isolation 1GHz CMOS 1.65 V to 2.75V 2:1 Mux/SPDT Switches
Wideband/ 43dB Isolation 1GHz/ CMOS 1.65 V to 2.75V/ 2:1 Mux/SPDT Switches
Wideband, 43 dB Isolation @ 1 GHz, CMOS 1.65 V to 2.75 V, 2:1 Mux/SPDT Switches
|
Analog Devices, Inc.
AD[Analog Devices]
|
| TSH690 TSH690ID |
40MHz to 1GHz AMPLIFIER
|
STMicroelectronics
|
| MGFK36V4045 |
RECTIFIER SCHOTTKY SINGLE 2A 100V 50A-Ifsm 0.79Vf 0.5A-IR SMB 3K/REEL
14.0-14.5GHz BAND 4W INTERNALLY MATCHED GaAs FET
14.0-14.5 GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| MGP20N40CL |
CAP 0.1UF 50V 10% X7R DIP-2 TUBE-PAK S-MIL-PRF-39014/22
SMARTDISCRETES Internally Clamped / N-Channel IGBT
SMARTDISCRETES Internally Clamped, N-Channel IGBT
|
Motorola, Inc.
MOTOROLA[Motorola, Inc]
|
