PART |
Description |
Maker |
H20R1202 |
Reverse Conducting IGBT
|
Infineon Technologies
|
IKW50N65WR5-15 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHW20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
IHD10N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
IHW20N120R |
Reverse Conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142 THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
CRD5AS-12B-T13B00 |
Reverse Conducting Thyristor Medium Power Use
|
Renesas Electronics Corporation
|
5SHX19L6010 |
Reverse Conducting Integrated Gate-Commutated Thyristor
|
The ABB Group
|
5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd. The ABB Group
|
IXRH50N120 IXRH50N100 |
1200V IGBT with reverse blocking capability 1000V IGBT with reverse blocking capability
|
IXYS[IXYS Corporation]
|
U2102BNBSP U2102B |
IGBT/FET control timer for advanced dimmer, motion sensor, reverse phase control applications From old datasheet system
|
Atmel Corp
|