| PART |
Description |
Maker |
| BG313007 |
DUAL N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
From old datasheet system
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
|
Vishay Telefunken
|
| BF100507 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BF5030R BF503009 BF5030W |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
Infineon Technologies A...
|
| BF5020R BF5020W BF5020WE6327 |
Silicon N-Channel MOSFET Tetrode
|
Infineon Technologies AG
|
| BF2040R BF2040W BF2040 |
RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB
Silicon N-Channel MOSFET Tetrode
|
INFINEON[Infineon Technologies AG]
|
| BF998R |
From old datasheet system
Silicon N-Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor)
|
SIEMENS[Siemens Semiconductor Group]
Infineon
|
| BF961 |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
New Jersey Semi-Conduct...
|
| BF996S |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
|
TEMIC Semiconductors
|
| S888T |
N?Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode
From old datasheet system
|
Vishay
|
| BF2040 Q62702-F1775 |
Silicon N-Channel MOSFET Tetrode (For low noise/ high gain controlled input stages up to 1GHz Operating voltage 5V)
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)
|
Infineon
SIEMENS[Siemens Semiconductor Group]
|
