| PART |
Description |
Maker |
| IXBH6N170 IXBT6N170 |
High Voltage, High Gain BIMOSFET?/a> Monolithic Bipolar MOS Transistor
High Voltage, High Gain BIMOSFET⑩ Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ACT-F1288N ACT-F1288N-150P7T ACT-F1288N-150P7Q ACT |
High speed 1 Megabit monolithic FLASH. Speed 150ns.
High speed 1 Megabit monolithic FLASH. Speed 90ns.
High speed 1 Megabit monolithic FLASH. Speed 70ns.
ACT-F128K8 High Speed 1 Megabit Monolithic FLASH
High speed 1 Megabit monolithic FLASH. Speed 60ns.
High speed 1 Megabit monolithic FLASH. Speed 120ns.
|
AEROFLEX[Aeroflex Circuit Technology]
|
| IXBH12N300 |
High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
| ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
| TPD4113K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| TPD4105AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
| ECN2112 |
(ECN2102 / ECN2112) HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi Semiconductor
|
| A2460 |
Monolithic High Voltage MOSFET and IGBT Driver
|
Alpha Microelectronics
|
| LT3511HMSPBF LT3511HMSTRPBF |
Monolithic High Voltage Isolated Flyback Converter
|
Linear Technology
|
| LT3651-4.2 |
Monolithic 4A High Voltage Li-Ion Battery Charger
|
Linear Technology
|
| NCP105006 |
Monolithic High Voltage Gated Oscillator Power Switching Regulator
|
ON Semiconductor
|
