PART |
Description |
Maker |
FJZ594JC FJZ594J FJZ594JB FJZ594JBTF FJZ594JTF FJZ |
Silicon N-Channel Junction FET Si N-channel Junction FET 1 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET
|
FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor Corporation Fairchild Semiconductor, Corp.
|
S6846 S10053 S6809 |
MOSFET, Switching; VDSS (V): 600; ID (A): 11; Pch : -; RDS (ON) typ. (ohm) @10V: 0.58; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1450; toff (µs) typ: -; Package: LDPAK (S)- (1) Light modulation photo IC 光调制照片集成电
|
Hamamatsu Photonics
|
S7978 |
MOSFET, Switching; VDSS (V): -60; ID (A): -40; Pch : 50; RDS (ON) typ. (ohm) @10V: 0.02; RDS (ON) typ. (ohm) @4V[4.5V]: 0.033; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: -; toff (µs) typ: 25; Package: LDPAK (S)- (1)
|
Hamamatsu Photonics
|
STH300NH02L-6 |
N-channel 24 V, 0.95 mOhm typ., 180 A STripFET(TM) Power MOSFET in a H2PAK-6 package Automotive-grade N-channel 24 V, 0.95 typ., 180 A
|
ST Microelectronics STMicroelectronics
|
S4111-46Q S4111-16Q S4111-16R S4114-46Q S4114-35Q |
MOSFET, Switching; VDSS (V): 500; ID (A): 19; Pch : 35; RDS (ON) typ. (ohm) @10V: 0.325; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 1800; toff (µs) typ: 0.093; Package: TO-220FN MOSFET, Switching; VDSS (V): 500; ID (A): 25; Pch : -; RDS (ON) typ. (ohm) @10V: 0.21; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2600; toff (µs) typ: 103; Package: TO-3P Si photodiode array 16, 35, 46 element Si photodiode array for UV to NIR 硅光电二极管阵列16356元素硅的紫外到近红外光电二极管阵
|
Hamamatsu Photonics K.K.
|
021-3220 021-4510 021-4520 021-2220 042-3300 021-4 |
KNOB BLACK KNOB GREY ZIFFERNSCHEIBE TYP 3 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 0 KNOPFDM 14.5 PFEILSCHEIBE DM36.0 SCHWARZ ZIFFERNSCHEIBE TYP 1 KNOPFDM 36.0 ZIFFERNSCHEIBE TYP 2 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 1 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 9 KNOPFDM 14.5 ZIFFERNSCHEIBE典型9 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 8 KNOPFDM 21.0 ZIFFERNSCHEIBE典型8 KNOPFDM 21.0
|
EPCOS AG
|
FCH22N60N |
N-Channel SupreMOSMOSFET 600V, 22A, 165m Ultra Low Gate Charge (Typ. Qg = 45 nC), Low Effective Output Capacitance (Typ. Coss.eff = 196.4 pF)
|
Fairchild Semiconductor
|
EN7671A 2SK3738-TL-E 2SK3738-12 EN7671 |
N-Channel JFET, 40V, 50 to 130uA, 0.13mS, SMCP N-Channel Junction Silicon FET Impedance Converter Applications
|
ON Semiconductor Sanyo Semicon Device
|
STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics STMicroelectronics
|
2SK1332 |
20 mA, N-CHANNEL, Si, SMALL SIGNAL, JFET N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications
|
Sanyo
|
2SK303 |
Low-Frequency General-Purpose Amplifier Applications N-Channel Junction Silicon FET(用于低频通用放大器N沟道结型硅场效应 低频通用放大器应用N沟道结硅场效应管(用于低频通用放大沟道结型硅场效应管) N-Channel Junction Silicon FET Low-Frequency General-Purpose Amplifier Applications
|
Sanyo Electric Co., Ltd.
|
DSK5J01 |
Silicon N-channel Junction FET
|
Panasonic Semiconductor
|