PART |
Description |
Maker |
SHB636053E |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE 5 A, SILICON CARBIDE, BRIDGE RECTIFIER DIODE
|
Sensitron Semiconductor
|
SHB636053E09 |
HIGH VOLTAGE SILICON CARBIDE SINGLE PHASE FULL WAVE BRIDGE
|
Sensitron
|
SDT10S60 |
Silicon Carbide Schottky Diode 碳化硅肖特基二极 From old datasheet system Silicon Carbide Schottky Diodes - 10A diode in TO220-2 package
|
Infineon Technologies AG
|
SDB06S60 SDT06S60 SDP06S60 SDB06S60SMD |
Silicon Carbide Schottky Diodes - 6A diode in TO220-2 package 600V Silicon Carbide Ultrafast Schottky Diode Silicon Carbide Schottky Diodes - 6A diode in TO220-3 package Silicon Carbide Schottky Diodes - 6A diode in TO263 package
|
Infineon Technologies A... INFINEON[Infineon Technologies AG]
|
STPSC606 STPSC606D STPSC606G-TR |
6 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE, TO-220AC 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
STPSC406 STPSC406B-TR STPSC406D |
4 A, 600 V, SILICON CARBIDE, RECTIFIER DIODE 600 V power Schottky silicon carbide diode
|
STMicroelectronics
|
SHD62003109 SHD620031P |
HERMETIC SILICON CARBIDE RECTIFIER 4 A, SILICON CARBIDE, RECTIFIER DIODE HERMETIC SILICON CARBIDE RECTIFIER 8 A, SILICON CARBIDE, RECTIFIER DIODE
|
Sensitron Semiconductor
|
LSIC2SD120C08 |
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C
|
Littelfuse
|
Q62702-F722 BFP23 BFP26 Q62702-F622 |
PNP Silicon Transistor with high Reve... From old datasheet system PNP Silicon Transistors (High breakdown voltage Low collector-emitter saturation voltage)
|
Infineon SIEMENS[Siemens Semiconductor Group] SIEMENS AG
|
SHD676052 SHD676052B |
HERMETIC SILICON CARBIDE RECTIFIER
|
SENSITRON[Sensitron]
|
C4D10120D-14 |
Silicon Carbide Schottky Diode
|
Cree, Inc
|