| PART |
Description |
Maker |
| SKB06N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| SGW50N60HS |
High Speed IGBT in NPT-technology
|
INFINEON[Infineon Technologies AG]
|
| APT30GS60SRDQ2 APT30GS60SRDQ2G APT30GS60BRDQ2 APT3 |
Thunderbolt High Speed NPT IGBT with Anti-Parallel DQ Diode
|
Microsemi Corporation
|
| SGP20N60HS09 SGP20N60HS SGW20N60HS |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
http://
Infineon Technologies AG
|
| SGW50N60HS SGW50N60HS09 |
High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation
|
Infineon Technologies AG
|
| HGT1S11N120CNS HGTP11N120CN HGTG11N120CN HGT1S11N1 |
43A, 1200V, NPT Series N-Channel IGBT 43 A, 1200 V, N-CHANNEL IGBT, TO-263AB
Aluminum Electrolytic Radial Leaded General Purpose Capacitor; Capacitance: 3300uF; Voltage: 25V; Case Size: 16x25 mm; Packaging: Bulk 43 A, 1200 V, N-CHANNEL IGBT, TO-220AB
43A/ 1200V/ NPT Series N-Channel IGBT
43A 1200V NPT Series N-Channel IGBT
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| SIGC25T60UN Q67041-A4667-A001 SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| APT50GT60BR APT50GT60SRG APT50GT60BRG |
Thunderbolt IGBT
Insulated Gate Bipolar Transistor - NPT Standard Speed; Package: TO-247 [B]; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 52; 110 A, 600 V, N-CHANNEL IGBT, TO-247AD
|
Microsemi Corporation
http://
Microsemi, Corp.
|
| SGP30N60HS |
HIGHT SPEED IGBT CHIP IN NPT-TECHNOLOGY HIGHT高速IGBT的芯片在不扩散核武器条约技
|
Infineon Technologies AG
|
| SGW20N60 Q67040-S4236 Q67041-A4712-A2 Q67041-A4712 |
Fast S-IGBT in NPT-technology
Fast S-IGBT in NPT-technology 快速的S -不扩散核武器条约IGBT的技
Fast S-IGBT in NPT-technology( NPT ???涓??蹇??S-IGBT)
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
SIEMENS A G
|
