| PART |
Description |
Maker |
| BUK7606-55 BUK7606-55A |
TrenchMOS（TM）transistor Standard level FET(TrenchMOS（TM）晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM）transistor Standard level FET(TrenchMOSTM）晶体管标准电平FET) TrenchMOS（商标）一级标准场效应晶体管（TrenchMOS（商标）晶体管标准电平场效应管）
|
Philips Semiconductors
3M Company
|
| PHX8NQ11T PHX8NQ11T127 |
N-channel TrenchMOS-TM standard level FET 7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
7.5 A, 110 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB PLASTIC, TO-220F, FULL PACK-3
N-channel Trenchmos (tm) standard level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| BUK752R7-30B BUK75_762R7_30B-02 BUK762R7-30B |
TrenchMOS(TM) standard level FET
TrenchMOS TM standard level FET
From old datasheet system
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | TO-220AB
|
Philips
|
| BUK7635-55A K7635-55A/T3 |
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
35 A, 55 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET
|
NXP Semiconductors N.V.
|
| BSH114 BSH114-215 |
N-channel enhancement mode field effect transistor
N-channel TrenchMOS standard level FET N沟道TrenchMOS标准电平场效应管
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
|
| BUK754R0-55B BUK764R0-55B |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7608-55A BUK7608-55A-15 |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors N.V.
|
| BUK7E2R3-40E |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7610-100B-15 |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7607-30B-15 |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
| BUK7E3R1-40E |
N-channel TrenchMOS standard level FET
|
NXP Semiconductors
|
