| PART |
Description |
Maker |
| H15R1203 |
Reverse conducting IGBT
|
Infineon Technologies
|
| IHY20N135R3 |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies A...
|
| IHD06N60RA |
Reverse conducting IGBT with monolithic body diode
|
Infineon Technologies AG
|
| XSDT306TR XSDT306TS XSDT306TP XSDT306TK |
THYRISTOR|REVERSE-CONDUCTING|1.8KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.9KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.7KV V(DRM)|DO-200VAR142
THYRISTOR|REVERSE-CONDUCTING|1.5KV V(DRM)|DO-200VAR142
|
|
| DGT304RE DGT304RE13 |
Reverse Blocking Gate Turn-off Thyristor 390 A, 1300 V, REVERSE CONDUCTING GTO SCR
|
Dynex Semiconductor, Ltd.
Dynex Semiconductor Ltd.
DYNEX[Dynex Semiconductor]
|
| 5SHX26L4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 1590 A, 4500 V, SCR
|
The ABB Group
ABB, Ltd.
|
| 5SHX08F4510 |
Reverse Conducting Integrated Gate-Commutated Thyristor 390 A, 4500 V, SCR
|
ABB, Ltd.
The ABB Group
|
| IRGMVC50U |
600V COPACK Hi-Rel IGBT in a TO-258AA package
INSULATED GATE BIPOLAR TRANSISTOR WITH ON-BOARD REVERSE DIODE
|
IRF[International Rectifier]
|
| MID145-12A3 MII145-12A3 |
1200V IGBT module
IGBT Modules: Boost Configurated IGBT Modules
IGBT Modules - Short Circuit SOA Capability Square RBSOA 160 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
IXYS, Corp.
|
| TISP5110H3BJ TISP5115H3BJ TISP5190H3BJ |
FORWARD-CONDUCTING UNIDIRECTIONAL THYRISTOR
|
TY Semiconductor Co., Ltd
TY Semiconductor Co., L...
|
| TISPPBL3 TISPPBL3D TISPPBL3D-S TISPPBL3DR |
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) TELECOM, SURGE PROTECTION CIRCUIT, PDSO8
DUAL FORWARD-CONDUCTING P-GATE THYRISTORS FOR ERICSSON MICROELECTRONICS SUBSCRIBER LINE INTERFACE CIRCUITS (SLIC) 双远期导电的P -门晶闸管爱立信微电子用户线接口电路电路（SLIC
|
Bourns Inc.
Bourns, Inc.
|
