PART |
Description |
Maker |
1SV257 |
RF Varactor Diodes Variable Capacitance Diode Silicon Epitaxial Planar Type(变容硅外延平面型二极管(用于UHF波段无线电台 Variable Capacitance Diode Silicon Epitaxial Planar Type VCO For UHF Ratio
|
Toshiba Corporation Toshiba Semiconductor
|
MC981 |
Diode. For high speed switching application. Silicon epitaxial type. Peak reverse voltage 75 V. DIODE FOR HIGH SPEED SWICHING APPLICATION SILICON EPITAXIAL TYPE
|
Isahaya Electronics Corporation
|
DCJ010 1185 |
Silicon Epitaxial Planar Type Diode High-Speed Switching Diode From old datasheet system
|
SANYO[Sanyo Semicon Device] Sanyo Electric Co.,Ltd.
|
MA2B345 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-35
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MA3S781E |
Silicon epitaxial planar type (cathode common) 0.03 A, 2 ELEMENT, SILICON, SIGNAL DIODE
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MA27V17 |
Silicon epitaxial planar type UHF BAND, 2.98 pF, 6 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp.
|
MA2C346 |
Silicon epitaxial planar type VHF BAND, 13 pF, 15 V, SILICON, VARIABLE CAPACITANCE DIODE, DO-34
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
MA2S304 |
Silicon epitaxial planar type VHF BAND, 27.3 pF, 30 V, SILICON, VARIABLE CAPACITANCE DIODE
|
Panasonic, Corp. PANASONIC[Panasonic Semiconductor]
|
SSM5H14F |
Silicon N Channel MOS Type (U-MOS?/Silicon Epitaxial Schottky Barrier Diode Silicon N Channel MOS Type (U-MOS楼虏)/Silicon Epitaxial Schottky Barrier Diode
|
Toshiba Semiconductor
|
MA6X126 |
KPTC 19C 19#20 SKT PLUG 0.1 A, 4 ELEMENT, SILICON, SIGNAL DIODE Silicon epitaxial planar type
|
Panasonic, Corp. Panasonic Semiconductor
|
KDV143EL |
Silicon Epitaxial PIN Type Diode.
|
Korea Electronics (KEC)
|