| PART |
Description |
Maker |
| BF992 BF992-2015 BF992-15 |
Silicon N-channel dual gate MOS-FET
N-channel dual-gate MOSFET
|
Quanzhou Jinmei Electro...
NXP Semiconductors
Quanzhou Jinmei Electronic ...
|
| BF998A BF998B BF998RA BF998RAW BF998RB BF998RBW BF |
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS - Fieldeffect四极管，耗尽
N-Channel Dual Gate MOS-Fieldeffect Tetrode/ Depletion Mode
RES,Metal Glaze,33.2Ohms,200WV,1 /-% Tol,-100,100ppm-TC,1210-Case RoHS Compliant: No
N?Channel Dual Gate MOS-Fieldeffect Tetrode,Depletion Mode
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
Vishay Telefunken
VISAY[Vishay Siliconix]
|
| 3SK103 |
Silicon N-Channel Dual Gate MOS FET
|
ETC
|
| 3SK45 |
Silicon N-Channel Dual Gate MOS FET
|
Hitachi
|
| BF981 |
SILICON N-CHANNEL DUAL GATE MOS-FET
|
NXP Semiconductors
|
| 3SK318 3SK318YB-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier
|
Renesas Electronics Corporation
|
| BF992 BF992_3 |
Silicon N-channel dual gate MOS-FET
From old datasheet system
|
PHILIPS[Philips Semiconductors]
|
| 3SK317 3SK317ZR-TL-E |
Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier
|
Renesas Electronics Corporation
|
| 3SK309 |
Silicon N Channel MOS FET
GaAs N Channel Dual Gate MES FET UHF RF Amplifier
|
Hitachi Semiconductor
|
| MFE211 MFE212 |
N-CHANNEL DUAL GATE SILICON NITRIDE PASSIVATED MOS FIELD EFFECT TRANSISTORS
|
Digitron Semiconductors
|
| KK74ACT20 KK74ACT20D KK74ACT20N |
Dual 4-Input NAND Gate High-Speed Silicon-Gate CMOS
|
KODENSHI KOREA CORP.
|
| IW4012BD IW4012BN |
Dual 4-input NAND gate, high-voltage silicon-gate CMOS
|
INTEGRAL
|
