PART |
Description |
Maker |
IXBT10N170 IXBH10N170 |
Discrete IGBTs High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
|
IXYS Corporation
|
ECN3067 ECN3067SLV ECN3067SLR |
HIGH-VOLTAGE MONOLITHIC IC
|
Hitachi,Ltd. Hitachi Semiconductor
|
ECN3067 |
High Voltage Monolithic IC
|
Renesas Technology
|
ECN3022 |
High Voltage Monolithic IC
|
Hitachi
|
ECN3021 |
High Voltage Monolithic IC
|
Hitachi
|
TPD4105AK07 |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4144AK |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
TPD4105K |
High Voltage Monolithic Silicon Power IC
|
Toshiba Semiconductor
|
LT3587 LT3587EUD-PBF LT3587EUD-TRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
LT3587EUDPBF LT3587EUDTRPBF |
High Voltage Monolithic Inverter and Dual Boost
|
Linear Technology
|
LT3650-4.1 |
(LT3650-4.1 / -4.2) High Voltage 2 Amp Monolithic Li-Ion Battery Charger
|
Linear Technology Corporation
|