| PART |
Description |
Maker |
| 09031646921 |
Bauform C Messerleiste Einlot , 64 pol. type C male connector solder , 64 pol.
|
List of Unclassifed Manufacturers
|
| 09-91-0500 09-91-0600 09-91-0400 09-91-0300 09-91- |
CRIMPGEH.3.96MM 5P
BUCHSENL. 4P
BUCHSENL.3 POL.
BUCHSENL. 10P
BUCHSENL. 2P
BUCHSENLEISTE 6POL. BUCHSENLEISTE 6POL
＂CRIMP HOUSING 0.156＂＂ 13WAY “房0.156压”，3WAY
BUCHSENL. 8 POL. BUCHSENL8油料
|
Molex, Inc.
|
| 26-19-2051 26-19-2121 26-19-2101 |
3.96mm KK Hdr Vt Pol-W RPin VrA 5Ckt 5 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER
3.96mm KK Hdr Vt Pol-W RPin VrA 12Ckt 12 CONTACT(S), MALE, STRAIGHT TWO PART BOARD CONNECTOR, SOLDER
3.96mm KK Hdr Vt Pol-W RPin VrA 10Ckt
|
Molex, Inc.
MOLEX INC
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM075F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
| MICROSMD110 |
PolySwitch垄莽PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TSM600-250F-RA |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
| TS250-130F-RC-B-0.5-2 |
PolySwitch?PTC Devices
PolySwitch垄莽PTC Devices
|
Tyco Electronics
|
| TS600-200-RA-B-0.5 |
PolySwitch庐PTC Devices
PolySwitch?PTC Devices
|
Tyco Electronics
|
|
