| PART |
Description |
Maker |
| 3DD5606 |
CASE-RATED BIPOLAR TRANSISTOR
|
JILIN SINO-MICROELECTRONICS
|
| 3DD1556-O-A-N-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD1556 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5010HF-O-A-N-D 3DD5310HF |
CASE-RATED BIPOLAR TRANSISTOR 3DD5310 FOR LOW FREQUENCY AMPLIFICATION
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| 3DD5031 3DD5031-O-A-N-D 3DD5031-Y-O-A-B-D |
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5031 FOR LOW FREQUENCY
|
JILIN SINO-MICROELECTRONICS CO., LTD.
|
| IRG4PH30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT
|
International Rectifier
|
| IRG4RC10KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated UltraFast IGBT
|
International Rectifier
|
| IRG4PH30KPBF |
INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Ultrafast IGBT 绝缘栅双极晶体管短路额定IGBT的超
|
International Rectifier, Corp.
|
| IRGR3B60KD2 IRGR3B60KD2PBF |
600V Non Punch Through, Short Circuit Rated IGBT in a D-Pak package.
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
International Rectifier
|
| MGY25N120D_D ON1933 MGY25N120D |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCUIT RATED
|
ONSEMI[ON Semiconductor]
|
| TC74HC123AF TC74HC123AFN TC74HC123AP HC123 |
Bipolar Transistor; Package/Case:TO-126; Current Rating:500mA; Voltage Rating:300V
DUAL RETRIGGERABLE MONOSTABLE MULTIVIBRATOR
|
Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
http://
|
| IRFV360 |
400V Single N-Channel Hi-Rel MOSFET in a TO-258AA package
REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR
|
IRF[International Rectifier]
|
| BUZ102S Q67040-S4011-A2 |
High Speed CMOS Logic 12-Stage Binary Counter 16-SOIC -55 to 125 SIPMOS功率晶体管（N通道增强模式雪崩额定dv / dt的评价）
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated)
SIPMOS ? Power Transistor
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
