PART |
Description |
Maker |
CMOSH-4E10 |
ENHANCED SPECIFICATION SURFACE MOUNT SILICON SCHOTTKY DIODE
|
Central Semiconductor Corp
|
CMPT2907AE |
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
|
Central Semiconductor Corp
|
CMPT5401E |
ENHANCED SPECIFICATION SURFACE MOUNT PNP SILICON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
CMPT3906E CMPT3904E |
ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSITORS
|
CENTRAL[Central Semiconductor Corp]
|
CMPD2836E10 CMPD2838E |
ENHANCED SPECIFICATION SURFACE MOUNT DUAL, SILICON SWITCHING DIODES
|
Central Semiconductor Corp Central Semiconductor C...
|
CMUD6263E CMUD6263SE CMUD6263AE CMUD6263CE |
ENHANCED SPECIFICATION SURFACE MOUNT ULTRAmini SILICON SCHOTTKY DIODES
|
CENTRAL[Central Semiconductor Corp]
|
CMPD914E10 |
ENHANCED SPECIFICATION SURFACE MOUNT HIGH SPEED SILICON SWITCHING DIODE
|
Central Semiconductor Corp
|
CMST6427E MST6427E |
ENHANCED SPECIFICATION SURFACE MOUNT, SUPERmini SILICON NPN DARLINGTON TRANSISTOR
|
CENTRAL[Central Semiconductor Corp]
|
CMOSH-4E |
SURFACE MOUNT ENHANCED SPECIFICATION SILICON SCHOTTKY DIODE SMD Schottky Diode Single: High Current
|
Central Semiconductor Corp.
|
KV1913A KV1933A KV1973A KV2143 KV2153 GC1303 KV212 |
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE ENHANCED PERFORMANCE SURFACE MOUNT EPSM PACKAGED DEVICES C BAND, 1.8 pF, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE OPTOCOUPLER 10MBPS OC 5-SOP Tuning Varactors
|
Microsemi, Corp. MICROSEMI[Microsemi Corporation]
|
749010013 744761068A |
All 16 terminals must lie on a plane within 004 of surface A after lead tinning specification for release specification for release
|
Wurth Elektronik GmbH & Co. KG, Germany. Wurth Elektronik GmbH &...
|
LSP1000 LSP100009 LSP1002 LSP1004 LSP1011 LSP1012 |
ENHANCED PERFORMANCE SURFACE MOUNT EPSM PIN Diodes TM
|
Microsemi Corporation
|