| PART |
Description |
Maker |
| HER1001G10 |
10.0 AMPS. Glass Passivated High Efficient Rectifiers
10 A, 50 V, SILICON, RECTIFIER DIODE, TO-220AB
|
Taiwan Semiconductor Company, Ltd
|
| NIS611105 NIS6111QPT1G NIS6111 NIS6111QPT1 |
BERS IC (Better Efficiency Rectifier System) Ultra Efficient, High Speed Diode(BERS IC，高效，高速二极管)
|
ONSEMI[ON Semiconductor]
|
| HER202G HER201G |
Passivated High Efficient Rectifiers 50 to 1000 Volts 2.0 Amp Glass 2 A, 100 V, SILICON, RECTIFIER DIODE, DO-15
5000 GATE 3.3 VOLT LOGIC CELL ARRAY - NOT RECOMMENDED for NEW DESIGN
|
Micro Commercial Components, Corp.
|
| H1DL H1GL |
High Efficient Rectifier Diode
|
Yangzhou yangjie electr...
|
| HT11G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| TBYV26C |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| 10-FZ062TA015SM-P985D13 |
High-efficient rectifier
|
Vincotech
|
| EGC20MH EGC20GH EGC20KH EGC20DH EGC20JH |
High Efficient Rectifier
|
Zowie Technology Corporation
|
| US1M US1F |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
| HER508 |
HIGH EFFICIENT RECTIFIER DIODES
|
SynSemi, Inc.
|
| HER180 |
HIGH EFFICIENT RECTIFIER DIODES
|
EIC discrete Semiconductors
|
