PART |
Description |
Maker |
HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
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HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8 Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp. Renesas Electronics Corporation
|
FMP36-015P IXYSCORP-FMP36-015P |
Polar P & N-Channel Power MOSFETs Common Drain Topology 36 A, 150 V, 0.04 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET ISOPLUS, I4-PAC-5
|
IXYS Corporation IXYS, Corp.
|
BUZ104SL-4 |
Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
|
SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
|
HAT2165H-EL-E HAT2165H-15 |
55 A, 30 V, 0.0053 ohm, N-CHANNEL, Si, POWER, MOSFET Silicon N Channel Power MOS FET Power Switching Old Company Name in Catalogs and Other Documents
|
Renesas Electronics Corporation
|
RJK0365DPA RJK0365DPA-00-J0 |
30 A, 30 V, 0.0134 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0364DPA RJK0364DPA-00-J0 |
35 A, 30 V, 0.0112 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
RJK0348DPA10 RJK0348DPA-00-J0 |
Silicon N Channel Power MOS FET Power Switching 50 A, 30 V, 0.0035 ohm, N-CHANNEL, Si, POWER, MOSFET LEAD FREE, WPAK(2), 8 PIN
|
Renesas Electronics Corporation
|
MRF21125S MRF21125 MRF21125SR3 |
RF POWER FIELD EFFECT TRANSISTORS S BAND, Si, N-CHANNEL, RF POWER, MOSFET MRF21125, MRF21125S, MRF21125SR3 2170 MHz, 125 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola Mobility Holdings, Inc. Motorola, Inc MOTOROLA[Motorola Inc]
|
APT10021JFLL_04 APT10021JFLL APT10021JFLL04 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 37 A, 1000 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET ISOTOP-4
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] Microsemi, Corp.
|
RJK0358DSP-00-J0 RJK0358DPA RJK0358DPA-00-J0 RJK03 |
38 A, 30 V, 0.0054 ohm, N-CHANNEL, Si, POWER, MOSFET WPAK-8 Silicon N Channel Power MOS FET Power Switching
|
Renesas Electronics Corporation
|
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