PART |
Description |
Maker |
K8S6415EBB-DE7C K8S6415EBB-DC7C K8S6415EBB-FE7C K8 |
64M Bit (4M x16) Muxed Burst , Multi Bank NOR Flash Memory
|
http://
|
NAND01G-M NAND256-M NAND256R3M0 NAND256R3M0AZB5E N |
SPECIALTY MEMORY CIRCUIT, PBGA149 256/512Mb/1Gb (x8/x16, 1.8/3V, 528 Byte Page) NAND Flash Memories 256/512Mb (x16/x32, 1.8V) LPSDRAM, MCP
|
NUMONYX STMICROELECTRONICS[STMicroelectronics]
|
S30MS512P25BAW000 S30MS512P25BAW003 S30MS512P25BFW |
32M X 16 FLASH 1.8V PROM, 25 ns, PBGA137 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit??Technology 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBitTechnology 128M X 8 FLASH 1.8V PROM, 25 ns, PBGA137 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit?/a> Technology 1Gb/512Mb, x8/x16, 1.8 Volt NAND Interface Memory Based on MirrorBit Technology
|
SPANSION LLC Spansion, Inc.
|
MB84VD22281EA-90-PBS MB84VD22282EA-90-PBS MB84VD22 |
Stacked MCP (multi-chip package) flash memory & SRAM 32M(x8/x16) flash memory & 8M(x8/x16) static RAM 32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
Fujitsu Microelectronics
|
MB84VD22387EJ-90-PBS MB84VD22396EJ-90-PBS MB84VD22 |
32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM 32M的(x16)的闪存16M内存(x16)的SRAM接口的FCRAM 32M (X16) FLASH MEMORY 16M (X16) SRAM Interface FCRAM SPECIALTY MEMORY CIRCUIT, PBGA71 ER 9C 9#16 SKT RECP WALL SPECIALTY MEMORY CIRCUIT, PBGA71
|
Spansion Inc. Spansion, Inc.
|
HY64UD16322M-DF85E HY64UD16322M-DF85I HY64UD16322M |
Mobile PSRAM - 32Mb 2M x 16 bit Low Low Power 1T/1C Pseudo SRAM x16|3.0(VDD)3.0(VDDQ)V|70/85|Pseudo SRAM - 32M x16 | 3.0(VDD)在3.0(提供VDDQ)V | 70/85 |伪静态存储器- 32M
|
Hynix Semiconductor, Inc.
|
MB84VP2449 MB84VP24491HK MB84VP24491HK-70PBS |
128M (X16) FLASH MEMORY 32M (X16) Mobile FCRAMTM
|
Fujitsu Media Devices Limited
|
MB84VD22281EA-90 MB84VD22282EA-90 MB84VD22283EA-90 |
32M (x 8/x16) FLASH MEMORY & 8M (x 8/x16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
MB84VD2218XEC MB84VD2218 MB84VD22181EC MB84VD22194 |
32M (x 8/x16) FLASH MEMORY & 4M (x 8/x16) STATIC RAM
|
FUJITSU[Fujitsu Media Devices Limited]
|
M36P0R8070E0 M36P0R8070E0ZACE M36P0R8070E0ZACF |
256 Mbit (x16, multiple bank, multilevel, burst) Flash memory 128 Mbit (burst) PSRAM, 1.8 V supply, multichip package
|
Numonyx B.V
|
K4S510832B-CL75 K4S510832B-UC75 K4S510432B-CL75 K4 |
512Mb B-die SDRAM Specification 512MB的乙芯片内存规格 32M X 16 SYNCHRONOUS DRAM, 5.4 ns, PDSO54
|
http:// Samsung Electronic SAMSUNG[Samsung semiconductor] SAMSUNG SEMICONDUCTOR CO. LTD. Samsung Semiconductor Co., Ltd.
|